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A new kind of superimposing morphology for enhancing the light scattering in thin film silicon solar cells： Combining random and periodic structure

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Chinese Physics B 2014年第8期23卷 350-356页

作者： Huang Zhen-Hua institute of photo-electronics thin film devices and technique of nankai university Tianjin 300071 China Key Laboratory of photo-electronics thin film devices and technique of tianjin Tianjin 300071 China Key Laboratory of photo-electronic Information Science and Technology of Ministry of Education (nankai university) Tianjin 300071 China

In this article, a new type of superimposing morphology comprised of a periodic nanostructure and a random structure is proposed for the first time to enhance the light scattering in silicon-based thin film solar cells. According to the framework of the Reyleigh-Sommerfeld diffraction algorithm and the experimental results of random morphologies, we analyze the light-scattering properties of four superimposing morphologies and compare them with the individual morphologies in detail. The results indicate that the superimposing morphology can offer a better light trapping capacity, owing to the coexistence of the random scattering mechanism and the periodic scattering mechanism. Its scattering property will be dominated by the individual nanostructures whose geometrical features play the leading role.

关键词： light scattering superimposing morphology random periodic

A fast method to diagnose phase transition from amorphous to microcrystalline silicon

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Science china(Physics,Mechanics & Astronomy) 2007年第6期50卷 731-736页

作者： HOU GuoFu1,2,3,XUE JunMing1,2,3,YUAN YuJie1,2,3,SUN Jian1,2,3,ZHAO Ying1,2,3 & GENG XinHua1,2,3 1 institute of photoelectronics,nankai university,tianjin 300071,china 2 tianjin Key Laboratory of photoelectronic thin film devices and technique,tianjin 300071,china 3 Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education of china,tianjin 300071,china institute of photoelectronics Nankai University Tianjin China tianjin Key Laboratory of photoelectronic thin film devices and technique Tianjin China Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education of china Tianjin China

A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various si-lane concentrations. The influence of silane concentration on structural and elec-trical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time,optical emis-sion spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties,Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism,why both OES and Raman can be used to diagnose the phase transition,was analyzed theoretically.

关键词： amorphous silicon, microcrystalline silicon, phase transition, optical emission spectroscopy A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.……

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PVDF基准固态染料敏化太阳电池的研究

太阳能学报 2010年第3期31卷 302-305页

作者：蔡宁李媛赵颖纪伟伟张晓丹熊绍珍南开大学光电子薄膜器件与技术研究所天津市光电子薄膜器件与技术重点实验室天津300071

以聚偏氟乙烯(PVDF)为凝胶剂,分别将有机溶剂、离子液体电解质固化,并采用这两种体系的电解质分别封装成染料敏化太阳电池,测试了凝胶剂的加入量对太阳电池光电特性的影响,同时利用交流阻抗谱分析了聚合物的加入对抑制暗电流的作用。其... 详细信息

以聚偏氟乙烯(PVDF)为凝胶剂,分别将有机溶剂、离子液体电解质固化,并采用这两种体系的电解质分别封装成染料敏化太阳电池,测试了凝胶剂的加入量对太阳电池光电特性的影响,同时利用交流阻抗谱分析了聚合物的加入对抑制暗电流的作用。其中,有机溶剂电解质中PVDF的质量分数分别为5%、20%、25%;离子液体(甲基-丙基咪唑,MPII)电解质中PVDF的质量分数分别为0%、1%、10%。实验中制备的准固态小面积(0.25cm^2)封装电池光电转换效率均高于5.3%,PVDF含量为25%的有机溶剂型准固态电池的效率达到5.92%。此外,实验中还制备了密封的1cm^2的准固态电解质电池,并获得了6.26%的效率,此时对应的J_(SC)=15.4mA/cm^2,V_(OC)=0.672V,FF=60.5%。

关键词：染料敏化太阳电池准固态电解质

Synthesis of nanostructural ZnO using hydrothermal method for dye-sensitized solar cells

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Science china(Technological Sciences) 2010年第4期53卷 1146-1149页

作者： WANG ChunXiao1,2,ZHANG XiaoDan1,WANG DongFeng1,YANG ZhenHua1,2,JI WeiWei1,ZHANG CunShan2 & ZHAO Ying1 1 institute of photo-electronic thin film devices and Technology of nankai university,Key Laboratory of photo-electronic Information Science and Technology(nankai university),Ministry of Education,tianjin 300071,china 2 College of Information Engineering,Hebei university of Technology,tianjin 300130,china Key Laboratory of photo-electronic Information Science and Technology (nankai university) Ministry of Education Institute of Photo-electronic Thin Film Devices and Technology of Nankai University Tianjin China College of Information Engineering Hebei University of Technology Tianjin China

ZnO nanocrystals with different morphologies were successful synthesized by a simple hydrothermal method combined with and without hexadecyl trimethyl ammonium bromide(CTAB).The phases and morphologies of the products were measured using X-ray diffraction(XRD),scanning electron microscopy(SEM),and transmission electron microscopy(TEM),*** results indicated that the ZnO nanocrystals with different morphologies were of hexagonal wurtzite *** nanorods were obtained without using CTAB,and then the morphology of ZnO changed to ZnO nanoflower and the density of nanoflower became denser with the increase of CTAB *** nanoflower and ZnO nanorod as photoanode were applied to dye-sensitized solar cells(DSSC),*** nanoflower shows a higher dye loading,so DSSC with the use of the ZnO nanoflower possesses a higher conversion efficiency than ZnO nanorod.

关键词： DSSC ZnO

SiGe:H thin filmS PREPARED BY PLASMA ASSISTED REACTIVE THERMAL CHEMICAL VAPOR DEPOSITION

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SiGe:H THIN FILMS PREPARED BY PLASMA ASSISTED REACTIVE THERM...

Effects of annealing rate and morphology of sol–gel derived ZnO on the performance of inverted polymer solar cells

2007世界太阳能大会：太阳能与人类居住

作者： Liping Zhang Jianjun Zhang Zeren Shang Zengxin Hu Jian Sun Yin Zhao Xinhua Geng institute of photo-electronics thin film devices and technique,nankai university,tianjin 300072,china tianjin Key Laboratory of photo-electronic thin film devices and Technology Key Laboratory of Opto-electronic Information Science and Technology (nankai university,tianjin university),Ministry of Education,tianjin 300072,china

In this work,very high frequency plasma assisted reactive thermal chemical vapor deposition(VHFPA-RTCVD) technology is applied to prepare SiGe:H thin films on a low-temperature *** structural properties of SiGe:H thin...

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Chinese Physics B 2013年第11期22卷 664-668页

作者：余璇胡子阳黄振华于晓明张建军赵庚申赵颖 institute of photo-electronic thin film devices and Technology of nankai university Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin Key Laboratory of Opto-electronic Information Science and Technology for Ministry of Education

The effects of annealing rate and morphology of sol–gel derived zinc oxide （ZnO） thin films on the performance of inverted polymer solar cells （IPSCs） are investigated. ZnO films with different morphologies are prepared at different annealing rates and used as the electron transport layers in IPSCs. The undulating morphologies of ZnO films fabricated at annealing rates of 10 ℃/min and 3 ℃/min each possess a rougher surface than that of the ZnO film fabricated at a fast annealing rate of 50 ℃/min. The ZnO films are characterized by atomic force microscopy （AFM）, optical transmittance measurements, and simulation. The results indicate that the ZnO film formed at 3 ℃/min possesses a good-quality contact area with the active layer. Combined with a moderate light-scattering, the resulting device shows a 16% improvement in power conversion efficiency compared with that of the rapidly annealed ZnO film device.

关键词： polymer solar cells zinc oxide thin film morphology annealing

Characteristics of CIGS thin films Fabricated under Simple Control Conditions

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Characteristics of CIGS Thin Films Fabricated under Simple C...

Second mode unstable disturbance measurement of hypersonic boundary layer on cone by wavelet transform

第十五届国际光伏科学与工程大会

作者： Ao Jianping~1 Sun Yun~2 Li Fengyan He Qing Sun Guozhong Zhou Zhiqiang Li Changjian Liu Fangfang institute of photoelectron Technology nankai university tianjin 300071 china tianjin Key Laboratory of photo-electronic thin film devices and Technology tianjin 300071 china

＜正＞ The evaporation source and substrate heater with small heating power are installed in vacuum chamber. Three-stage process and the constant power heating substrates at second-stage and third-stage are adopted. These methods improved the controllability and reproducibility of the depositing CIGS thin films greatly. The precision of temperature control is up to±4℃for Cu, ±2℃for In, ±3℃for Ga and ±1℃for Se source, respectively. The maximum differences of CIGS thin film components are Cu: 1.92%;In: 1.68%;Ga: 1.55%;Se: 1.19%, respectively. The typical elemental ratio of CIGS thin film is Cu: 22.20%, In: 20.05%, Ga: 6.25, Se: 51.5%, respectively and Cu/（In+Ga） =0.87～0.95, Ga/（In+Ga）=0.19-0.24;The film thickness is 2±0.1μm.

关键词： CIGS thin film Multisource Coevaporation Three-stage Process

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Acta Mechanica Sinica 2011年第4期27卷 488-493页

作者： Jian Han.Nan Jiang.Yan Tian Department of Mathematics,tianjin university,300072 tianjin,china Department of Mechanics,tianjin university,300072 tianjin,china tianjin Key Laboratory of Modern Engineering Mechanics,300072 tianjin,china State Key Laboratory of Nonlinear Mechanics,institute of Mechanics,Chinese Academy of Sciences,100190 Beijing,china Department of Mathematics Tianjin University Tianjin China Department of Mechanics Tianjin University Tianjin China tianjin Key Laboratory of Modern Engineering Mechanics Tianjin China State Key Laboratory of Nonlinear Mechanics Institute of Mechanics Chinese Academy of Sciences Beijing China

Experimental investigation of hypersonic boundary layer instability on a cone is performed at Mach number 6 in a hypersonic wind tunnel. Time series signals of instantaneous fluctuating surface-thermal-flux are measured by Pt-thin-film thermocouple temperature sensors mounted at 28 stations on the cone surface in the streamwise direction to investigate the development of the unstable disturbance. Wavelet transform is employed as a mathematical tool to obtain the multi-scale characteristics of fluctuating surfacethermal-flux both in the temporal and spectrum space. The conditional sampling algorithm using wavelet coefficient as an index is put forward to extract the unstable disturbance waveform from the fluctuating surface-thermal-flux *** generic waveform for the second mode unstable disturbance is obtained by a phase-averaging technique. The development of the unstable disturbance in the streamwise direction is assessed both in the temporal and spectrum space. Our study shows that the local unstable disturbance detection method based on wavelet transformation offers an alternative powerful tool in studying the hypersonic unstable mode of laminar-turbulent transition. It is demonstrated that, at hypersonic speeds, the dominant flow instability is the second mode, which governs the course of laminar-turbulent transition of sharp cone boundary layer.

关键词： Hypersonic boundary layer. Sharp cone Insta-bility Wavelet transform

Structure design of nano-TiO2 electrode in dye-sensitized solar cells

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Structure design of nano-TiO2 electrode in dye-sensitized so...