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Simulation of Isotopic Angular Effects under ion Bombardment of a^(92.Mo-^(100)Mo Target

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Journal of Materials Science & Technology 1997年第1期13卷 65-68页

作者： Liping ZHENG (shanghai institute of Nuclear Research,{2., shanghai 2.1800, china)Risheng LI and Shuyou LI(lab. of Atomic Imaging of Solids, institute of Metal Research,{2.,Shenyang 110015, china) shanghai institute of Nuclear Research Chinese Academy of Sciences Shanghai 201800 China lab. of Atomic Imaging of Solids Institute of Metal Research Chinese Academy of Sciences Shenyang 110015 China

Under 5 keV Ar ion bombardment of a 92.o-100Mo target, we have investigated isotopic angular effects by means of the static and the dynamic Monte Carlo programs. Our calculated results are in quantitative agreement with the measured and other calculated results. The conclusion consistences among theories. simulations and measurements are also discussed.

关键词： Mo Target Simulation of Isotopic Angular Effects under ion Bombardment of a Target

Microstructure and Electromechanical Properties in PMnN-PZT Ceramics Sintered at Different Temperatures

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Journal of Materials Science & Technology 2005年第3期21卷 386-390页

作者： Baoshan LI, Zhigang ZHU, Guorong LI and Aili DING State Key lab of High Performance Ceramics and Superfine Microstructure, shanghai {2. of Ceramics, chinese academy of sciences, shanghai 2.0050, china lab. of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China

The microstructure and piezoelectric properties of Pb[(Zr0.52.i0.48)0.95(Mn1/3Nb2.3)0.05]03 (PMnN-PZT) ceramics have been investigated at different sintering temperatures from 1070℃ to 12.0℃. The experimental results suggest that grain sizes and electromechanical properties of the ceramics show strong sintering temperature dependences. Double polarization to electric field (P-E) loops of the PMnN-PZT ceramics are assumed to be the result of the pinning effect of the defect dipoles. The results obtained through X-ray photoelectron spectrum suggest that sintering temperature affects valence of the Mn ion and quantity of oxygen vacancies. Hence, a proper explanation is proposed to illustrate the fluctuation of mechanical quality factor (Qm) due to the sintering temperature.

关键词： Sintering temperature Piezoelectric properties Oxygen vacancies PMnN-PZT

TeO_(x) Thin Films for Write-Once Optical Recording Media

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Journal of Materials Science & Technology 2004年第6期20卷 678-680页

作者： Qinghui LI, Donghong GU and Fuxi GANResearch laboratory for High Density Optical Storage, shanghai {2. of Optics and Fine Mechanics, chinese academy of sciences, shanghai 2.1800, china lab. of High Density Optical Storage Inst. of Optics and Fine Mech. Chinese Acad. of Sci. Shanghai 201800 China

TeO_x thin films were prepared by vacuum evaporation of TeO_2.powder. Structural characteristic and surface mor-phology of the as-deposited films was analyzed by using X-ray photoelectron spectroscopy, transmission electron microscopy, X-ray diffractometer and atomic force microscopy. It was found that the films represented a two component {2. comprising Te particies dispersed in an amorphous TeO2.matrix. The dispersed Te particies were in a crystalline state. The TeOx films showed a finely granular structure and a rough surface. Results of the statie recording test showed that the TeO_x films had good writing sensitivity for short-wavelength laser beam (514.5 nm). Primary results of the dynamic test at 514.5 nm were also reported. The TeO_x films were suitable for using as a blue-green wavelength high density optical storage medium.

关键词： TeO_x thin film Statie recording test Dynamic test High density optical storage

Blue light emission from C^+ implanted SiO_2.films

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chinese Science Bulletin 1997年第19期42卷 1670-1671页

作者： ZHAO Jun, YANG Gengqing, LIN Zixin, JIANG Binyao, ZHOU Zuyao and LIU Xianghuaiion beam {2.oratory, shanghai institute of Metallurgy, chinese academy of sciences, shanghai 2.0050, china ion beam {2.oratory Shanghai Institute of Metallurgy Chinese Academy of Sciences Shanghai China

VISIBLE photoluminescence (PL) from nanostructured group Ⅳ semiconductors has attractedgreat attention, since visible PL at room temperature(RT) from porous silicon was discoveredby Canham in 1990. This makes it possible that the conventional planar technology of sili-con may be used in optoelectronics devices directly. Moreover, it is also an ideal object

关键词： SiO Blue light emission from C implanted SiO2.films

Photoluminescence from Ge-SiO_2.thin films and its mechanism

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chinese Science Bulletin 2001年第15期46卷 1268-1271页

作者： DONG Yemin, CHEN Jing, TANG Naiyun, YE Chunnuan, WU Xuemei, ZHUGE Lanjian & YAO Weiguo1. Department of Physics, Suzhou University, Suzhou 2.5006, china 2. shanghai {2. of Metallurgy, chinese academy of sciences, shanghai 2.0050, china Department of Physics Suzhou University Suzhou China shanghai institute of Metallurgy Chinese Academy of Sciences Shanghai China

Ge-SiO2.thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2.composite target. Films were annealed in N2.ambience for 30 min at 300℃-1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃-1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of *** peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO2.matrix.

关键词： Ge-SiO2 thin films rf magnetron sputtering photolumi- nescence light emitting mechanism.

PREPARATion OF TiN FILMS BY N_2.ASSISTED Xe^+ ion {2. ENHANCED DEPOSITion AND THEIR MECHANICAL PROPERTIES

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Acta Metallurgica Sinica(English Letters) 1992年第11期5卷 370-374页

作者： WANG Xi YANG Genqing LIU Xianghuai ZHENG Zhihong HUANG Wei ZHOU Zuyao ZOU Shichang ion beam {2.oratory,shanghai institute of Metallurgy,Academia Sinica,shanghai,china shanghai Inst of Metallurgy Acad Sinica Shanghai China

A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2.gas *** synthesized TiN films were superior to PVD and CVD ones in respects of improved adhesion to substrate and low preparing *** exhibited good wear resistance and high hardness up to 2.00 kg/mm^*** industrial applications have been reported.

关键词： TiN film ion beam enhanced deposition mechanical properties

Φ Meson Production in Heavy ion Collisions at RHIC

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原子核物理评论 2009年第S1期26卷 142-147页

作者： SHI Xing-hua1,2.CHEN Jin-hui1,MA Yu-gang1,CAI Xiang-zhou1,MA Guo-liang1 (1 shanghai institute of Applied Physics,{2., shanghai 2.1800, china 2.Graduate School of{2., Bejing 100049, china) shanghai institute of Applied Physics Chinese Academy of SciencesShanghai 201800China Graduate School of chinese academy of sciences Bejing 100049China shanghai institute of Applied Physics Chinese Academy of SciencesShanghai 201800China

We present Φ meson production in Cu+Cu and Au+Au collisions measured by the STAR experiment at *** hadronic decay mode Φ→ K+K-is used in the *** yields for Φ meson in Cu+Cu and Au+Au collisions at a given beam energy are scaled by the number of *** Npart normalized Φ meson yields in heavy ion collisions over those from p+p collisions are larger than 1 and increase with collision *** results suggest that the source of enhancement of strange hadrons is related to the formation of a dense medium in high energy heavy ion collisions and can not be only due to canonical suppression of their production in smaller *** also present STAR results on the Φ meson elliptic flow v2.from sNN=2.0 GeV Cu+Cu at *** elliptic flow in Cu+Cu system that has the similar relative magnitude and qualitative features as that in Au+Au *** observations imply the hot and dense matter with partonic collectivity has been formed in heavy ion collisions at RHIC. However,eccentrality normalized v2.v2.(nqεpart) is lower for Cu+Cu than for Au+Au collisions at 2.0 *** this might indicate thermalization has not been reached in 2.0 GeV Cu+Cu collisions.

关键词： Φ meson production elliptic flow

PIXE and INAA studies on ancient potteries from Guangfulin relics in shanghai

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Progress in Natural Science:Materials International 2007年第11期17卷 1348-1356页

作者： Lin Jiawei1, Cheng Huansheng1, Zhang Zhengquan1, Zhang Bin1, Feng Songlin2. Song Jian3, Gao Menghe4 and Zhu Dan1(1. Applied ion beam Physics {2.oratory, Key {2.oratory of the ministry of Education, institute of Modern Physics, Fudan University, shanghai 2.0433, china 2. Key {2.oratory of Nuclear Analytical Techniques, institute of High Energy Physics, Beijing 100039, china 3. shanghai Museum, shanghai 2.0003, china 4. Department of Cultural Heritage and Museology, Fudan University, shanghai 2.0433, china) Applied ion beam Physics {2.oratory Key Laboratory of the Ministry of Education Institute of Modern Physics Fudan University Shanghai 200433 China Key laboratory of Nuclear Analytical Techniques Institute of High Energy Physics Beijing 100039 China shanghai Museum Shanghai 200003 China Department of Cultural Heritage and Museology Fudan University Shanghai 200433 China

This paper reports the study of ancient potteries unearthed from the Guangfulin site in shanghai. From the external features of these potteries, archeologists can classify them into two different cultural types: Liangzhu culture (local culture) and a new culture which might be derived elsewhere, but they can not recognize whether they were produced in the same place. Proton induced X-ray emission (PIXE) and instrumental neutron activation analysis (INAA) were used to measure the chemical compositions of the samples and the results were analyzed using multivariate statistics. We found that the two methods can complement each other and their database can be mutually referenced in the study of ancient potteries. Experimental results show that the compositions of the potteries from the two cultural types are different, which means that the materials for ancient potteries of new culture originate from elsewhere. This supports the archaeologists’ speculation that a group of ancient people migrated to shanghai from some other places 4000 years ago.

关键词： PIXE INAA factor analysis Guangfulin ancient pottery

Investigation on the Tribology of Co Implanted Stainless Steel Using Metal Vapor Vacuum Arc ion Source

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Journal of Materials Science & Technology 2004年第3期20卷 265-268页

作者： Junxia GUO Xun CAI Qiulong CHEN Key lab for High Temperature Materials and Testing, shanghai Jiao Tong University, shanghai 2.0030, china lab. for High Temp. Mat. and Testing Shanghai Jiaotong Univ. Shanghai 200030 China

AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steelwas investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ionsource with an extraction voltage of 40 kV, implantation doses of 3×10^(17)/cm^2.and 5×10^(17)/cm^2. and ion currentdensities of 13, 2. and 32.A/cm^2. The results showed that the near-surface hardness of Co-implanted stainless steelsample was increased by 50% or more, and it increased with increasing ion current density at first and then declined.The friction coefficient decreased from 0.74 to 0.2. after Co implantation. The wear rate after Co implantationreduced by 2.% or more as compared to the unimplanted sample. The wear rate initially decreased with increasingion current density and then an increase was observed. Within the range of experimental parameters, there existsa critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased with increasingretained dose, going through a minimum and then increased. The critical ion current density in this paper is about2.μA/cm^2.

关键词： Tribology Metal vapor vacuum arc Cobalt Implanted stainless steel