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Suppressed Antiferromagnetism and Superconductivity in As-deficient Iron-based Superconductor of SrFe_(1.8)Co_(0.2)As_x

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稀有金属材料与工程 2011年第S3期40卷 358-361页

作者： Liu Zhiyong1, Lu Yuming1, Liu Jinlei1, Qu Chunqing1,2,3, Chen Changzhao1, Cai Chuanbing1, Huang Fuqiang3, Xie Xiaoming2 1 shanghai University, shanghai 200444, china 2 state key laboratory of functional materials for informatics,shanghai institute of microsystem and information technology,chinese academy of sciences,shanghai 200050, china 3 shanghai institute of Ceramics, chinese academy of sciences, shanghai 200050, china shanghai Univ Res Ctr Superconductors & Appl Technol Shanghai 200444 Peoples R China chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China chinese Acad Sci Shanghai Inst Ceram Shanghai 200050 Peoples R China

Iron-based superconductors namely Sr(Fe1.8Co0.2)As1.8 (FeAs1.8) and Sr(Fe1.8Co0.2)As1.85 (FeAs1.85) with As deficiency are prepared by solid-state reaction. X-ray diffraction reveals that the polycrystalline phase forms in the studied samples, identical to typical SrFe2As2 (122) matrix. Resistive and magnetic measurements show that the superconducting transition temperatures (Tc) are about 19 K for both FeAs1.8 and FeAs1.85. Compared with the performances of typical iron-based 122 superconductors arising from Co doping, the present samples show the suppressed superconductivity. Moreover, the antiferromagnetic (AFM) phase correlated with spin-density-wave (SDW) is reduced as well. The AFM transition temperature decreases to 122 K for FeAs1.85, while such a phase transition is absent at all for FeAs1.8, one sample with less As, implying that the existence of SDW and antiferromagnetism is more sensitive to As content.

关键词： antiferromagnetism superconductivity iron-based superconductors

Fabrication of thick BOX SOI by Smart-cut technology

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Nuclear Science and Techniques 2003年第2期14卷 115-118页

作者： WU Yan-Jun, ZHANG Miao, AN Zheng-Hua, LIN Cheng-Lu(state key laboratory of functional materials for informatics, shanghai institute of microsystem and information technology,the chinese academy of sciences, shanghai 200050) shanghai institute of microsystem and information technology the Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics 上海 200050

A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.

关键词：灵活切割技术微观结构截面透射电子显微镜 XTEM 电学特性绝缘硅片 SOI

Gettering of copper impurity in silicon by aluminum precipitates and cavities

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Nuclear Science and Techniques 2003年第3期14卷 164-167页

作者： WU Yan-Jun, ZHANG Miao, ZHANG Ning-Lin, LIN Cheng-Lu(state key laboratory of functional materials for informatics. shanghai institute of microsystem and information technology.the chinese academy of sciences, shanghai 200050) shanghai institute of microsystem and information technology the Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics 上海 200050

Al precipitates as well as cavities (or open-volume detects) are known for their ability to getter impuri-ties within Si. In order to compare their relative gettering strength we produced both Al precipitates and cavities atdifferent depths within one Si wafer. This was done by H+ and Al+ implantation with different energies and subse-quent annealing process, resulting in Al-Si alloy and cavities at depth of 300 nm and 800 nm, respectively. Cu wasthen implanted with an energy of 70 keV to a fluence of 1 × 1014 / cm2. The Cu implanted samples were annealed attemperature from 700℃ to 1200℃. It was found that Cu impurities were gettered primarily by the precipitated Allayer rather than by cavities at the temperature of 700～1000℃, while gettering of Cu occured in both regions at thetemperature of 1200℃. The secondary ion mass spectrometry and transmission electron microscopy analyses wereused to reveal the interaction between Cu impurities and defects at different trap sites.

关键词：铜硅片铝过渡金属元素

Channel characterization at 120 GHz for future indoor communication systems

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chinese Physics B 2013年第5期22卷 650-656页

作者：陈镇曹俊诚 key laboratory of Terahertz Solid-state technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences

We present a simulation on the spatial and temporal characteristics of the indoor propagation channel at 120 GHz. The simulation, applied to a dynamic scenario with randomly placed objects and moving people in a room, is based on a three-dimensional ray-tracing method. Propagation and reflection mechanisms of electromagnetic waves are discussed in the channel model. The received power in a 0.95-m-height plane is obtained. Comparison between walls and ceiling covered with dielectric mirrors and those with three common wall and ceiling materials are presented. The result shows that the holistic received power level with dielectric mirrors is about 10 dB higher than with other materials.

关键词： sub-terahertz communication channel models ray tracing electromagnetic propagation

Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure

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Nuclear Science and Techniques 2003年第2期14卷 119-122页

作者： ZHU Ming, LIN Qing, LIU Xiang-Hua, LIN Zi-Xin, ZHANG Zheng-Xuan, LIN Cheng-Lu(state key laboratory of functional materials for informatics, Shanghal institute of microsystem and information technology,the chinese academy of sciences, shanghai 200050) shanghai institute of microsystem and information technology the Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics 上海 200050

An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and O+ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.

关键词：自动加热效应埋存层状结构绝缘硅片 SOI 二氧化硅

Two crucial factors influencing quality of GaAs on Ge substrate

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chinese Physics B 2014年第4期23卷 488-491页

作者：邓闯门传玲陈达 School of Energy and Power Engineering University of Shanghai for Science and Technology state key laboratory of functional materials for informatics Institute of Microsystem and Information TechnologyChinese Academy of Sciences

High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.

关键词： molecular beam epitaxy low temperature annealing low temperature epitaxy

Switching effects in superconductor/ferromagnet/superconductor graphene junctions

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chinese Physics B 2013年第12期22卷 460-464页

作者：李晓薇刘丹鲍艳辉 School of Physics and Electronic Electrical Engineering and Jiangsu key laboratory for Chemistry of Low-Dimensional materials Huaiyin Normal University state key laboratory of functional materials for informatics (Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences) School of Physics Northeast Normal University

The Josephson effect in the superconductor/ferromagnet/superconductor（SFS） graphene Josephson junction is studied using the Dirac Bogoliubov-de Gennes（DBdG） formalism. It is shown that the SFS graphene junction drives 0–π transition with the increasing of p=h0L/vFhˉ, which captures the effects of both the exchange field and the length of the junction; the spin-down current is dominant. The 0 state is stable for p state is stable for p > pc, where the free energy minima are at φg= 0 and φg= π, respectively. The coexistence of the 0 and π states appears in the vicinity of pc.

关键词： superconductor junction grapheme switching effect

Single photon response of superconducting nanowire single photon detector

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Science Bulletin 2010年第Z1期 441-445页

作者： YOU LiXing, SHEN XiaoFang & YANG XiaoYan state key laboratory of functional materials for informatics, shanghai institute of microsystem and information technology (SIMIT), chinese academy of sciences, shanghai 200050, china

Single photon detection is one of the key technologies for quantum key distribution in quantum communication. As a novel single photon detection technology, superconducting nanowire single photon detector (SNSPD) surpasses conventional semiconducting single photon detectors with high count rate and low dark count rate. In this article, we introduce SNSPD fabricated from NbN ultrathin superconducting film and lab-based SNSPD system. The characteristics of single photon response pulse of SNSPD are analyzed in detail. Also discussed is the relationship between waveform of single photon response and system bandwidth. Circuit model is made to analyze the performance of SNSPD. The simulation result agrees well with the experimental data. Those results are valuable for understanding the mechanism of SNSPD and building future SNSPD system for quantum communication.

关键词： quantum communication single photon detection superconducting nanowire single photon detector kinetic inductance

Performance analysis of LDPC codes on OOK terahertz wireless channels

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chinese Physics B 2016年第2期25卷 553-557页

作者：刘纯王长曹俊诚 key laboratory of Terahertz Solid-state technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Science

Atmospheric absorption, scattering, and scintillation are the major causes to deteriorate the transmission quality of terahertz（THz） wireless communications. An error control coding scheme based on low density parity check（LDPC） codes with soft decision decoding algorithm is proposed to improve the bit-error-rate（BER） performance of an on-off keying（OOK） modulated THz signal through atmospheric channel. The THz wave propagation characteristics and channel model in atmosphere is set up. Numerical simulations validate the great performance of LDPC codes against the atmospheric fading and demonstrate the huge potential in future ultra-high speed beyond Gbps THz communications.

关键词： terahertz wireless channels low density parity check codes atmospheric turbulence gamma-gamma models