Gettering of copper impurity in silicon by aluminum precipitates and cavities

作     者：WU Yan-Jun, ZHANG Miao, ZHANG Ning-Lin, LIN Cheng-Lu(State Key Laboratory of Functional Materials for Informatics. Shanghai Institute of Microsystem and Information Technology.the Chinese Academy of Sciences, Shanghai 200050) 

作者机构：Shanghai Institute of Microsystem and Information Technology the Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics 上海 200050 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2003年第14卷第3期

页      面：164-167页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0827[工学-核科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：Supported by the National Natural Science Foundation of China(No.69906005)and the Shanghai Youth Foundation(No.01QMH1403) 

主　　题：铜 硅片 铝 过渡金属元素 

摘      要：Al precipitates as well as cavities (or open-volume detects) are known for their ability to getter impuri-ties within Si. In order to compare their relative gettering strength we produced both Al precipitates and cavities atdifferent depths within one Si wafer. This was done by H+ and Al+ implantation with different energies and subse-quent annealing process, resulting in Al-Si alloy and cavities at depth of 300 nm and 800 nm, respectively. Cu wasthen implanted with an energy of 70 keV to a fluence of 1 × 1014 / cm2. The Cu implanted samples were annealed attemperature from 700℃ to 1200℃. It was found that Cu impurities were gettered primarily by the precipitated Allayer rather than by cavities at the temperature of 700～1000℃, while gettering of Cu occured in both regions at thetemperature of 1200℃. The secondary ion mass spectrometry and transmission electron microscopy analyses wereused to reveal the interaction between Cu impurities and defects at different trap sites.