检索结果-南通市图书馆

在线全文

学校读者我要写书评

暂无评论

氧化钒薄膜的制备及电致开关特性的研究

光电子．激光 2011年第5期22卷 656-659页

作者：张楷亮韦晓莹王芳武长强赵金石天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室天津300384

采用反应溅射法,室温下,在Cu/Ti/SiO2/Si衬底上制备了氧化钒（VOx）薄膜,并对薄膜进行450℃、30min的真空退火处理。采用X-射线衍射（XRD）、原子力显微镜（AFM）对薄膜的结晶取向和表面形貌进行了表征,通过半导体参数分析仪对薄膜的电... 详细信息

采用反应溅射法,室温下,在Cu/Ti/SiO2/Si衬底上制备了氧化钒（VOx）薄膜,并对薄膜进行450℃、30min的真空退火处理。采用X-射线衍射（XRD）、原子力显微镜（AFM）对薄膜的结晶取向和表面形貌进行了表征,通过半导体参数分析仪对薄膜的电开关特性进行测试,并利用导电原子力显微镜（CAFM）对VOx薄膜的导电机制进行了探索。测试结果表明,VOx薄膜在Cu/Ti/SiO2/Si衬底取向生长,并且是以V2O5为主的V6O13和V2O5的混合物,薄膜表面颗粒大小均匀（30~40 nm）,粗糙度为2.4 nm。电学测试结果表明薄膜具有较低（Vset=0.72 V,Vreset=0.39 V）的开关电压,开关电阻的转变倍率约3个数量级,经CAFM测试发现,VOx薄膜导电态中有导电细丝,结合VOx/Cu界面态及Cu离子快扩散特性,认为VOx薄膜导电态主要是Cu离子在薄膜中扩散形成的导电细丝所致。

关键词：氧化钒(VOx)薄膜电阻开关特性阻变机理

A study of transition from n-to p-type based on hexagonal WO3 nanorods sensor

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2014年第4期23卷 208-214页

作者：武雅乔胡明韦晓莹 School of Electronics and Information Engineering Tianjin University

Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.

关键词： hexagonal W03 nanorods sensor hydrothermal method n- to p-type transition

在线全文

学校读者我要写书评

暂无评论

光诱导氧化钒薄膜原位太赫兹波调制特性研究

红外与激光工程 2019年第10期48卷 233-239页

作者：韦晓莹李心元吴环宝王天鹤贾晓东天津津航技术物理研究所天津300308 航天动力技术研究院陕西西安710025

采用磁控溅射及快速热氧化法在c-Al2O3基底制备出高质量的氧化钒薄膜。首先,分析结果表明所制备的氧化钒薄膜表面颗粒大小均匀,表面均方根粗糙度约为16.75 nm,主要成分为VO2和V2O5,V4+离子的含量为78.59%,所制备的氧化钒薄膜具有稳定的... 详细信息

采用磁控溅射及快速热氧化法在c-Al2O3基底制备出高质量的氧化钒薄膜。首先,分析结果表明所制备的氧化钒薄膜表面颗粒大小均匀,表面均方根粗糙度约为16.75 nm,主要成分为VO2和V2O5,V4+离子的含量为78.59%,所制备的氧化钒薄膜具有稳定的热致相变特性;其次,光诱导下薄膜的THz波调制特性研究结果显示,随着激励光功率增大,薄膜的THz透过率逐渐减小;最后,经过多次原位反复测试结果表明所制备的氧化钒薄膜具有稳定可逆的THz波调制特性,可应用于太赫兹开关和调制器等集成式太赫兹功能器件。

关键词：氧化钒薄膜太赫兹波调制光诱导

Analysis of the resistive switching behaviors of vanadium oxide thin film

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2013年第3期22卷 437-441页

作者：韦晓莹胡明张楷亮王芳赵金石苗银萍 School of Electronics Information Engineering Tianjin University School of Electronics Information Engineering Tianjin Key Laboratory of Film Electronic & Communication Devices Tianjin University of Technology

We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory *** switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative *** CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative *** Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.

关键词： VOx thin films reversible resistive switching resistive random access memory(RRAM) conductive atomic force microscope

Preparation and modification of VO_2 thin film on R-sapphire substrate by rapid thermal process

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2014年第4期23卷 649-654页

作者：朱乃伟胡明夏晓旭韦晓莹梁继然 School of Electronics and Information Engineering Tianjin University

The VO2 thin film with high performance of metal-insulator transition （MIT） is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process （RTP）. The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum （THz-TDS）. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, atomic force microscopy （AFM）, and search engine marketing （SEM） are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

关键词： rapid thermal process V02 thin film phase transition modification

长距离高落差GIL多参量集成监测研究与应用

在线全文

学校读者我要写书评

暂无评论

红外与激光工程 2024年第2期53卷 168-175页

作者：张兆闯陈建国韦晓莹张宝刘玉鹏王喜春陈青涛张孟辰周涛溪洛渡水力发电厂云南昭通657300 江苏南瑞恒驰电气装备有限公司江苏无锡214161 航天光电科技发展(天津)有限公司天津300192

针对气体绝缘金属封闭输电线路(Gas Insulated Transmission Lines, GIL)外壳振动、温度、应变等多参量通过分布光纤传感技术完成数据采集,并针对采集数据进行研究和应用。通过振动、应变、温度监测试验和数据分析,系统可准确测得光纤... 详细信息

针对气体绝缘金属封闭输电线路(Gas Insulated Transmission Lines, GIL)外壳振动、温度、应变等多参量通过分布光纤传感技术完成数据采集,并针对采集数据进行研究和应用。通过振动、应变、温度监测试验和数据分析,系统可准确测得光纤感知的振动、应变和温度数据,数据准确可靠。经测试系统测温精度≤±0.5℃,温度空间分辨率≤±0.6 m,定位精度≤±0.3 m;系统应变测量精度≤±20με;系统振动定位精度≤±2 m,振动定位精度≤±2 m。通过对GIL外壳振动、温度、应变等多参量进行集成监测研究,在减少传感设备数量的前提下探索GIL运行规律。

关键词： GIL 多参量监测分布式光纤传感 GIL运行规律

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2013年第9期22卷 554-558页

作者：张楷亮刘凯王芳尹富红韦晓莹赵金石 School of Electronics Information Engineering Tianjin Key Laboratory of Film Electronic & Communication DevicesTianjin University of Technology School of Electronics Information Engineering Tianjin University

We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related

关键词： resistive switching vanadium oxide conducting filament magnetron sputtering

发现系统用户检索式行为研究——以西交利物浦大学为例

在线全文

学校读者我要写书评

暂无评论

新世纪图书馆 2020年第4期 45-50页

作者：王俊杨丽萍韦晓莹西交利物浦大学图书馆学术联络与参考咨询部江苏苏州215123 西交利物浦大学图书馆江苏苏州215123

本文以西交利物浦大学为例,对发现系统中用户的大量检索式数据进行分析,分别从检索式的语种、主题、检索字段、检索策略、检索效果和检索事件来揭示用户检索式的一般行为特征。揭示的特征包括:(1)用户采用的检索式语种以英语为主;(2)用... 详细信息

本文以西交利物浦大学为例,对发现系统中用户的大量检索式数据进行分析,分别从检索式的语种、主题、检索字段、检索策略、检索效果和检索事件来揭示用户检索式的一般行为特征。揭示的特征包括:(1)用户采用的检索式语种以英语为主;(2)用户检索式表达的主题倾向于人文社科领域;(3)用户在发现系统中对检索字段的选用和检索策略的运用高于搜索引擎。针对反映的特征和问题,本文在资源整合、系统优化、信息素养课程设置方面提出改进建议。

关键词：检索词检索式检索行为发现系统

EFL大学生信息检索焦虑现状及其与外语焦虑的相关性分析

在线全文

学校读者我要写书评

暂无评论

图书馆学刊 2020年第3期42卷 6-11页

作者：蒋欣韦晓莹杨丽萍西交利物浦大学图书馆江苏苏州

围绕信息检索焦虑展开研究,引入信息检索焦虑量表(ISAS量表)和外语课堂焦虑量表(FLCAS),试图分析国内EFL大学生信息检索焦虑的现状,并探究语言因素对信息检索焦虑的影响,为国内相关高校图书馆有针对性地开展EFL环境下学生信息素养教育... 详细信息

围绕信息检索焦虑展开研究,引入信息检索焦虑量表(ISAS量表)和外语课堂焦虑量表(FLCAS),试图分析国内EFL大学生信息检索焦虑的现状,并探究语言因素对信息检索焦虑的影响,为国内相关高校图书馆有针对性地开展EFL环境下学生信息素养教育与服务提供理论参考与建议。

关键词：信息检索焦虑外语焦虑 EFL 信息素养