Analysis of the resistive switching behaviors of vanadium oxide thin film

作     者：韦晓莹 胡明 张楷亮 王芳 赵金石 苗银萍 

作者机构：School of Electronics Information EngineeringTianjin University School of Electronics Information EngineeringTianjin Key Laboratory of Film Electronic & Communication Devices Tianjin University of Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第3期

页      面：437-441页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064) the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055,61274113,and 11204212) the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029) Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700) 

主　　题：VOx thin films reversible resistive switching resistive random access memory(RRAM) conductive atomic force microscope 

摘      要：We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory *** switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative *** CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative *** Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.