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妊娠期高血压疾病剖宫产孕妇再次妊娠发生早发型子痫前期的临床分析

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中华产科急救电子杂志 2021年第2期10卷 82-88页

作者：毕石磊张丽姿贾金平温穗文王志坚曹引丽王少帅徐晓燕冯玲赵先兰赵扬玉朱启英漆洪波张兰珍李宏田杜丽丽陈敦金广东省广州医科大学附属第三医院妇产科广东省产科重大疾病重点实验室广州重症孕产妇救治中心510150 广州市花都区妇幼保健院 510800 广东省广州医科大学附属第六医院-清远市人民医院妇产科 511500 广东省南方医科大学南方医院妇产科 510515 西安市西北妇女儿童医院 710003 武汉市华中科技大学同济医学院附属同济医院妇产科 430030 郑州市郑州大学第一附属医院妇产科 450052 北京大学第三医院妇产科 100191 乌鲁木齐市新疆医科大学第一附属医院妇产科 830054 重庆医科大学附属第一医院妇产科 401122 广东省广州医科大学附属第二医院妇产科 510260 北京国家卫生健康委员会生育健康重点实验室 100191

目的分析既往因妊娠期高血压疾病剖宫产孕妇再次妊娠发生早发型子痫前期的危险因素及母儿围产期结局。方法收集2017年1月至12月来自11家三级医院既往因妊娠期高血压疾病剖宫产后再次妊娠的478例孕妇的临床资料,采用Logistic多因素回归... 详细信息

目的分析既往因妊娠期高血压疾病剖宫产孕妇再次妊娠发生早发型子痫前期的危险因素及母儿围产期结局。方法收集2017年1月至12月来自11家三级医院既往因妊娠期高血压疾病剖宫产后再次妊娠的478例孕妇的临床资料,采用Logistic多因素回归分析方法,分析既往高血压类型和再次妊娠的临床特征与早发型子痫前期的相关性,以及早发型子痫前期对母儿围产期结局的影响。结果转诊和高血压病史是既往因妊娠期高血压疾病而剖宫产的孕妇再次妊娠发生早发型子痫前期(转诊a OR=6.085,95%CI=2.209~16.759,高血压病史a OR=28.860,95%CI=4.309~193.277)、妊娠期高血压(转诊a OR=2.912,95%CI=1.524~5.567,高血压病史a OR=14.094,95%CI=3.881~51.190)及晚发型子痫前期(转诊a OR=2.602,95%CI=1.325~5.109,高血压病史a OR=17.755,95%CI=4.728~66.671)的危险因素。与血压正常、妊娠期高血压、晚发型子痫前期孕妇相比,早发型子痫前期孕妇住院时间长,转入新生儿重症监护率高(76.5%vs 10.4%,X^(2)=133.40;76.5%vs 31.1%,X^(2)=26.69;76.5%vs 21.4%,X^(2)=41.84,P值均<0.05)。结论早发型子痫前期对孕妇及新生儿的影响较大,对高危人群的早期识别和防治具有重要意义。

关键词：子痫前期剖宫产术妊娠结局

Ultraviolet spot position measurement based on 4 H-SiC quadrant photodetectors

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Chinese Optics Letters 2024年第11期 136-140页

作者：杨霈辰王一夫徐尉宗周东任芳芳陈敦军张荣郑有炓陆海 School of Electronic Science and Engineering Nanjing University Hefei National Laboratory

In this Letter, we demonstrate ultraviolet(UV) spot position measurement based on the 4 H-SiC quadrant photodetectors(QPDs). The 4 H-SiC QPD with an 8 mm × 8 mm active area exhibits high uniformity across four quadrants, with a consistent low dark current of ～18 p A and a responsivity of 0.111 A/W at 275 nm. Based on the QPD, the prototype system shows high positioning capability with a slight inherent nonlinearity. Correspondingly, the measurement error is analyzed and a calibration method utilizing the Boltzmann function is developed for the error correction. Evident improvement in positioning accuracy of the measurement system has been realized, achieving a position resolution of 0.3 μm and a mean positioning error of ～28.5 μm.

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Approach to Single-Mode Dominated Resonant Emission in Ga N-Based Square Microdisks on Si

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Chinese Physics Letters 2020年第5期37卷 59-63页

作者： Meng-Han Liu Peng Chen Zi-Li Xie Xiang-Qian Xiu Dun-Jun Chen Bin Liu Ping Han Yi Shi Rong Zhang You-Dou Zheng Kai Cheng Li-Yang Zhang Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing UniversityNanjing 210093 Enkris Semiconductor Inc.NW-20 Nanopolis SuzhouSuzhou 215123

Square microdisks with round corners are fabricated using a standard GaN-based blue LED on Si *** gallery-like inodes in the square microdisks are investigated by finite-difference time-domain *** simulation results reveal that the round corners in square microdisks can substantially suppress the number of light propagation paths and further reduce the number of optical modes.A con focal microphotoluminescence is performed to analyze the optical properties of the square microdisks at room *** single-mode dominant resonant emission is obtained in the square microdisk with corner radius of 1.5μm.

关键词： temperature. optical corners

Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

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Chinese Physics B 2020年第5期29卷 525-529页

作者： Qing-Jun Xu Shi-Ying Zhang Bin Liu Zhen-Hua Li Tao Tao Zi-Li Xie Xiang-Qian Xiu Dun-Jun Chen Peng Chen Ping Han Ke Wang Rong Zhang You-Liao Zheng Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China College of Optoelectronics Engineering Zaozhuang UniversityZaozhuang 277160China

The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration(~ 1020 cm-3) grown by metal–organic chemical vapor deposition(MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and(VⅢ complex)1- as well as VN3+ and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mgdoped AlxGa1-xN(x = 0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2×1018 cm-3 and 3.3× 1017 cm-3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors’ concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

关键词： AlGaN Mg doping MOCVD cathodo-luminescence Hall measurement

妊娠期宣教及生后适度水解乳清蛋白配方干预预防婴儿过敏性疾病的前瞻性研究

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中华围产医学杂志 2015年第12期18卷 904-909页

作者：孙雯王志坚钟梅薛乔陈郁葱邓美莲陈红武何平温秀兰谭美珍刘倩筠李绮薇刘运霞徐晨光徐慧卿刘增佑王伟颜永萍林瑞春何景然黎萍陈敦金广州医科大学附属第三医院妇产科 510150 广州医科大学附属第三医院儿科 510150 南方医科大学南方医院妇产科南方医科大学南方医院儿科广州市妇女儿童医疗中心产科广州市妇女儿童医疗中心儿保科中山大学附属第一医院妇产科中山大学附属第一医院新生儿科深圳市第六人民医院妇产科深圳市第六人民医院儿科

目的探讨妊娠期宣教及生后适度水解乳清蛋白配方（partially hydrolyzed whey formula,pHF-W）干预预防婴儿过敏性疾病的作用.方法选择2011年11月至2013年11月在广东省5家医院足月分娩的健康新生儿1 773例,根据生后4个月内喂养情况分... 详细信息

目的探讨妊娠期宣教及生后适度水解乳清蛋白配方（partially hydrolyzed whey formula,pHF-W）干预预防婴儿过敏性疾病的作用.方法选择2011年11月至2013年11月在广东省5家医院足月分娩的健康新生儿1 773例,根据生后4个月内喂养情况分为pHF-W组653例、普通奶粉组246例和单纯母乳组874例.在妊娠期对孕妇进行宣教,告知均衡营养、合理膳食结构.婴儿出生后每次来院时由专人随访,并对产妇情况进行调查,婴儿随访至1岁.分析3组婴儿过敏性疾病发生情况、生长发育指标,检测脐血及3和6月龄血清IgE.采用方差分析、Kruskal-Wallis 检验、x2检验或Bonferroni法进行统计学分析.结果 1 773例新生儿男性893例（50.4％）,542例（30.6％）剖宫产出生,平均出生胎龄（39.0±0.7）周.3组新生儿一般人口学特征差异均无统计学意义（P值均＞ 0.05）.1 773例婴儿过敏总发生率为29.7％（526/1 773）,发病时间为生后3～8月龄,平均为（6.2±1.5）月龄.婴儿过敏性疾病以皮肤症状、消化道症状和呼吸道症状为主要表现的发生率分别为28.2％（500/1 773）、1.1％（20/1 773）和0.3％（6/1 773）.3组婴儿过敏的食物依次为鸡蛋（35.0％,7/20）、牛奶（30.0％,6/20）、鱼虾（1 5.0％,3/20）、花生（10.0％,2/20）和豆类（10.0％,2/20）.pHF-W组和单纯母乳组总过敏性疾病和湿疹的发生率低于普通奶粉组[总过敏性疾病：28.6％（187/653）、28.4％（248/874）与37.0％（91/246）,x2=7.356;湿疹：27.3％（178/653）、27.0％（236/874）与35.0％（86/246）,x2=6.456;P值均＜0.05].生后3个月,pHF-W组和单纯母乳组血清IgE水平均低于普通奶粉组,差异具有统计学意义[M（P25～P75）,1.0（0.1～5.1）、1.0（0.1～6.2）与1.2 （0.3～3.1） U/ml,P＜0.05].但3组婴儿脐血和6月龄血清IgE水平差异无统计学意义.3组婴儿出生时以及1、3、6、9、12月龄时身长、体重和头围差异均无统计学意义.结论妊娠期宣教及生后适度pHF-W干预能预防及减少婴儿过敏性疾病的发生.

关键词：超敏反应乳清蛋白婴儿配方孕妇早期医疗干预健康教育前瞻性研究

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

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Chinese Physics B 2022年第1期31卷 618-625页

作者： Zhen-Hua Li Peng-Fei Shao Gen-Jun Shi Yao-Zheng Wu Zheng-Peng Wang Si-Qi Li Dong-Qi Zhang Tao Tao Qing-Jun Xu Zi-Li Xie Jian-Dong Ye Dun-Jun Chen Bin Liu Ke Wang You-Dou Zheng Rong Zhang Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjingChina College of Optoelectronics Engineering Zaozhuang UniversityZaozhuang 277160China Institute of Novel Semiconductors State Key Laboratory of Crystal MaterialShandong UniversityJinan 250100China Xiamen University Xiamen 361005China

A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device *** to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth *** slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence *** growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been *** growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth *** and Si doped GaN were also studied,and both p-and n-type materials were obtained.

关键词： GaN molecular beam epitaxy(MBE) low growth rate growth diagram