检索结果-南通市图书馆

The Bipolar Field-Effect Transistor:Ⅵ.The CMOS Voltage Inverter Circuit(Two-MOS-Gates on Pure-Base)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2008年第11期29卷 2079-2087页

作者：揭斌斌薩支唐北京大学北京100871 佛罗里达大学中国科学院外籍院士北京100864

This paper reports the DC steady-state voltage and current transfer characteristics and power dissipation of the Complimentary Metal-Oxide-Silicon （CMOS） voltage-inverter circuit using one physical Bipolar Field-Effect Transistor （BiFET） of nanometer dimensions. The electrical characteristics are numerically obtained by solving the five partial dif- ferential equations for the transistor structure of two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both ends of the thin base. Internal and CMOS boundary conditions are used on the three potentials （electrostatic and electron and hole electrochemical potentials）. Families of curves are rapidly computed using a dual-processor personal computer running the 64-bit FORTRAN on the Windows XP operating system.

关键词： bipolar field-effect transistor theory surface channel volume channel CMOS inverter CMOS-BiFET

The Bipolar Field-Effect Transistor: *** Channel Electrochemical Current Theory (Two-MOS-Gates on Pure-Base)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2008年第1期29卷 1-11页

作者：揭斌斌薩支唐北京大学北京100871 佛罗里达大学美国佛罗里达州Gainesville FL32605 中国科学院北京100871

This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.

关键词： bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and hole surface andvolume channels surface potential short channel theory double-gate pure-base

The Driftless Electromigration Theory(Diffusion-Generation-Recombination-Trapping Theory)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2008年第5期29卷 815-821页

作者：薩支唐揭斌斌中国科学院北京大学北京100871

Electromigration is the transport of atoms in metal conductors at high electronic current-densities which creates voids in the conductors and increases the conductors＇ electrical resistance. It was delineated in 1961 by Huntington; then modeled by the empirical electrical resistance formula derived by Black in 1969 to fit the dependences of the experimental electrical resistance and failure data on the electrical current density and temperature. Tan in 2007 reviewed 40-years＇ ap- plications of the empirical Black formula to conductor lines interconnecting transistors and other devices in silicon integrated circuits. Since the first Landauer theory in 1957,theorists have attempted for 50 years to justify the drift force or electron momentum transfer assumed by Black as some electron-wind force to impart on the metal atoms and ions to move them. Landauer concluded in 1989 that the electron wind force is untenable even considering the most fundamental and complete many-body quantum transport theory. A driftless or electron-windless atomic void model for metal conductor lines is reviewed in this article. It was developed in the mid-1980 and described in 1996 by Sah in a homework solution. This model accounts for all the current and temperature dependences of experimental resistance data fitted to the empiri- cal Black formula. Exact analytical solutions were obtained for the metal conductor line resistance or current, R （t）/R （0） = J（t）/J（0） = [1-2（t/τα）^1/α]^-1/2 ,in the bond-breaking limit with α = 1 to 2 and diffusion limit with α = 2 to 4,from low to high current densities, where τα is the characteristic time constant of the mechanism, containing bond breaking and diffusion rates and activation energies of the metal.

关键词： electromigration driftless void model empirical Black formula diffusion-generation-recombinationtrapping

The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2008年第3期29卷 397-409页

作者：薩支唐揭斌斌中国科学院外籍院士北京大学北京100871

The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley＇s 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular （ x, y, z） parallelepiped transistors,uniform in the width direction （z-axis）,with one or two MOS gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification： the 1-gate on semi-infinite-thick impure-base （the traditional bulk transistor）, the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk （SOI） ,the 1-gate on thin impure-silicon layer deposited on insulating glass （SOI TFT）, and the 2-gates on thin pure-base （FinFETs）.

关键词： bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and hole surface and volume channels and currents surface potential two-section short-channel theory double-gate impure-base theory

The Bipolar Theory of the Field-Effect Transistor:*** Fundamental Physics and Theory(All Device Structures)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2008年第4期29卷 613-619页

作者：薩支唐揭斌斌佛罗里达大学北京大学北京100871

This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importance of the boundary conditions on the device current-voltage characteristics is discussed. An illustration is given of the transfer DCIV characteristics computed for two boundary conditions,one on electrical potential,giving much higher drift-limited parabolic current through the intrinsic transistor, and the other on the electrochemical potentials, giving much lower injection-over-thebarrier diffusion-limited current with ideal 60mV per decade exponential subthreshold roll-off, simulating electron and hole contacts. The two-MOS-gates on thin pure-body silicon field-effect transistor is used as examples

关键词： bipolar field-effect transistor theory MOS field-effect transistor electric potential electrochemical potential boundary conditions

The Bipolar Field-Effect Transistor:*** Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2008年第4期29卷 620-627页

作者：揭斌斌薩支唐北京大学北京100871

This paper reports the intrinsic-structure DC characteristics computed from the analytical electrochemical current theory of the bipolar field-effect transistor （BiFET） with two identical MOS gates on nanometer-thick pure-base of silicon with no generation-recombination-trapping. Numerical solutions are rapidly obtained for the three potential variables,electrostatic and electron and hole electrochemical potentials,to give the electron and hole surface and volume channel currents,using our cross-link two-route or zig-zag one-route recursive iteration algorithms. Boundary conditions on the three potentials dominantly affect the intrinsic-structure DC characteristics,illustrated by examples covering 20-decades of current （10-22 to 10-2 A/Square at 400cm^2/（V · s） mobility for 1.5nm gate-oxide, and 30nm-thick pure-base）. Aside from the domination of carrier space-charge-limited drift current in the strong surface channels,observed in the theory is also the classical drift current saturation due to physical pinch-off of an impure-base volume channel depicted by the 1952 Shockley junction-gate field-effect transistor theory,and its extension to complete cut-off of the pure-base volume channel,due to vanishing carrier screening by the few electron and hole carriers in the pure-base,with Debye length （25mm） much larger than device dimension （25nm）.

关键词： bipolar field-effect transistor theory recursive iteration electron and hole electrochemical potentials electric potential boundary conditions

'The Theory of Field-Effect Transistors *** Bipolar Drift and Diffusion Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2008年第7期29卷 1227-1241页

作者：揭斌斌薩支唐北京大学北京100871

The previous report （XI） gave the electrochemical-potential theory of the Bipolar Field-Effect Transistors. This report （XII） gives the drift-diffusion theory. Both treat 1-gate and 2-gate, pure-base and impure-base, and thin and thick base. Both utilize the surface and bulk potentials as the parametric variables to couple the voltage and current equations. In the present drift-diffusion theory, the very many current terms are identified by their mobility multiplier for the components of drift current,and the diffusivity multiplier for the components of the diffusion current. Complete analytical driftdiffusion equations are presented to give the DC current-voltage characteristics of four common MOS transistor structures. The drift current consists of four terms： 1-D （One-Dimensional） bulk charge drift term, 1-D carrier space-charge drift term,l-D Ex^2 （transverse electric field） drift term,2-D drift term. The diffusion current consists of three terms： 1-D bulk charge diffusion term,l-D carrier space-charge diffusion term,and 2-D diffusion term. The 1-D Ex^2 drift term was missed by all the existing transistor theories, and contributes significantly, as much as 25 % of the total current when the base layer is nearly pure. The 2-D terms come from longitudinal gradient of the longitudinal electric field,which scales as the square of the Debye to Channel length ratio, at 25nm channel length with nearly pure base, （LD/L）^2 = 10^6 but with impurity concentration of 10^18cm^-3 , （LD/L）^2 = 10^-2 .

关键词： bipolar field-effect transistor theory surface potential drift and diffusion theory single-gate impure-base double-gate impure-base

Bipolar Theory of MOS Field-Effect Transistors and Experiments

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2007年第10期28卷 1497-1502页

作者：薩支唐揭斌斌中国科学院北京大学北京100871

The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.

关键词： unipolar FET theory bipolar FET theory simultaneous hole and electron surface channels volume channel double-gate pure-base

The Bipolar Field-Effect Transistor:***-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2007年第12期28卷 1849-1859页

作者：薩支唐揭斌斌中国科学院北京大学北京100871

This paper describes the drift-diffusion theory of the bipolar field-effect transistor （BiFET） with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical （quasi-Fermi） potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.

关键词： bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and holesurface and volume channels surface potential~ longitudinal gradient of transverse electric field