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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

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Chinese Physics B 2015年第8期24卷 619-623页

作者：汤兰凤于广陆海武辰飞钱慧敏周东张荣郑有炓黄晓明 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing University Collaborative Innovation Center of Advanced Microstructures Nanjing University Peter Grnberg Research Center Nanjing University of Posts and Telecommunications

The influence of white light illumination on the stability of an amorphous In GaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.

关键词： amorphous indium gallium zinc oxide illumination detrapping effect thin film transistors interface states

乡村振兴战略背景下小学生源流失问题研究 ——以山东省聊城市S镇L小学为例

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乡村振兴战略背景下小学生源流失问题研究 ——以山东省聊城市S镇...

作者：武辰北京化工大学

学位级别：硕士

Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

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Chinese Physics B 2016年第5期25卷 321-325页

作者：武辰飞陈允峰陆海黄晓明任芳芳陈敦军张荣郑有炓 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China Peter Grunberg Research Center Nanjing University of Posts and TelecommunicationsNanjing 210003China

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.

关键词： amorphous indium–gallium–zinc–oxide thin-film transistors contact resistance surface potential

The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

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Chinese Physics Letters 2015年第7期32卷 171-174页

作者：黄晓明武辰飞陆海任芳芳朱洪波王永进 Peter Griinberg Research Center Nanjing University of Posts and Telecommunications Nanjing 210003 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing University Nanjing 210093

The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.

关键词： TFT The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

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Chinese Physics B 2015年第7期24卷 463-467页

作者：钱慧敏于广陆海武辰飞汤兰凤周东任芳芳张荣郑有炓黄晓明 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and EngineeringNanjing University Collaborative Innovation Center of Advanced Microstructures Nanjing University Peter Grnberg Research Center Nanjing University of Posts and Telecommunications

The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

关键词： amorphous indium gallium zinc oxide thin-film transistors positive bias stress trapping model interface states

度普利尤单抗治疗儿童痒疹样大疱性表皮松解症1例

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中华皮肤科杂志 2024年第7期57卷 654-655页

作者：武辰楠李垣君刘强海南医学院第一附属医院皮肤科海口570102 山西省儿童医院皮肤科太原030013

患儿女,11岁5个月,38 kg。因双下肢皮肤结节伴剧烈瘙痒3年余就诊。患儿出生后手腕、足跟摩擦后出现水疱,1岁后水疱消失,伴有指、趾甲萎缩发育不良,斜视.

关键词：皮肤结节大疱性表皮松解症单抗治疗发育不良痒疹样水疱

泡沫镍负载CuO纳米花的构筑及电化学硝酸根还原制氨的性能

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材料导报 2024年第10期38卷 63-69页

作者：黄顺元刘律飞顾韵洁葛帅辰李静莎苏州科技大学材料科学与器件研究院江苏苏州215009

电化学硝酸根还原制氨(Nitrate reduction to ammonia, NRA)是以硝酸根和水分别作为氮和氢的来源,采用电化学的途径实现室温下氨的绿色合成兼去除水中硝酸盐污染物,对缓解能源危机和环境问题具有重要的研究意义。然而,硝酸根到氨是一个... 详细信息

电化学硝酸根还原制氨(Nitrate reduction to ammonia, NRA)是以硝酸根和水分别作为氮和氢的来源,采用电化学的途径实现室温下氨的绿色合成兼去除水中硝酸盐污染物,对缓解能源危机和环境问题具有重要的研究意义。然而,硝酸根到氨是一个复杂的8e-转移过程且伴随着激烈的析氢副反应,这严重制约了合成氨的选择性和法拉第效率。为此,采用水热合成法及后续的热处理设计制备了泡沫镍负载氧化铜纳米花催化剂并探究其电化学硝酸根还原制氨性能。通过调控硝酸铜与尿素比例、热解温度等合成条件,达到泡沫镍(Ni foam, NF)均匀负载CuO纳米花的目的。结果表明,当Cu(NO3)2、CO(NH2)2的物质的量比为1∶6时,所得到的目标催化剂(CuO-6@NF)在法拉第效率、NH3产率、选择性和硝酸盐转换率方面表现出最佳性能。在-0.23 V ***情况下,CuO-6@NF NH3的产率达到1.15 mmol·h-1·cm-2,选择性为89.36%,总氮的去除率高达96.71%。此外,该催化剂还表现出良好的再现性、高稳定性以及较宽泛浓度下的适用性。

关键词：硝酸根还原合成氨电催化剂 CuO纳米花异质结

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兼顾经济性与可靠性的有源配电网动态重构

电力系统及其自动化学报 2024年

作者：颜湘武郭美辰吴鸣牛耕郑楠贾焦心河北省分布式储能与微网重点实验室(华北电力大学) 国网上海能源互联网研究院有限公司

在配电网重构的研究中，通常会对网络的稳态运行进行优化，但重构方案对网络故障情况下的可靠性也会产生影响。本文在考虑到分布式电源出力与负荷波动的情况下，为兼顾网络运行经济性与可靠性，减少新能源接入带来的负面影响，搭建配电... 详细信息

在配电网重构的研究中，通常会对网络的稳态运行进行优化，但重构方案对网络故障情况下的可靠性也会产生影响。本文在考虑到分布式电源出力与负荷波动的情况下，为兼顾网络运行经济性与可靠性，减少新能源接入带来的负面影响，搭建配电网动态重构模型。首先针对分布式电源接入的配电网，采用启发式孤岛搜索方法，并结合最小路法来求解可靠性指标。其次，以包含开关费用、线损费用与停电损失费用在内的的网络综合成本最小为目标函数，搭建网络动态重构模型。随后，采用改进的混合天鹰-非洲秃鹫算法进行模型求解。最后，通过在改进的IEEE33节点网络上进行仿真验证了模型的有效性。

关键词：配电网动态重构分布式电源启发式孤岛搜索可靠性评估天鹰算法与非洲秃鹫算法混合优化

线粒体功能障碍在糖尿病肾病足细胞脂代谢中作用的研究现状

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中国临床药理学杂志 2024年第17期 2601-2605页

作者：孙铭辰赵翠荣卢翠翠沈承武山东第一医科大学附属省立医院药学部山东第一医科大学研究生部

糖尿病肾病(DKD)作为终末期肾病(ESRD)的主要发病原因，其中线粒体功能障碍和脂代谢紊乱发挥关键作用。线粒体功能障碍导致过量活性氧(ROS)产生，抑制脂肪酸β氧化，形成脂毒性，是DKD足细胞损伤的关键。同时，脂质代谢紊乱加剧脂肪的... 详细信息

糖尿病肾病(DKD)作为终末期肾病(ESRD)的主要发病原因，其中线粒体功能障碍和脂代谢紊乱发挥关键作用。线粒体功能障碍导致过量活性氧(ROS)产生，抑制脂肪酸β氧化，形成脂毒性，是DKD足细胞损伤的关键。同时，脂质代谢紊乱加剧脂肪的异位积聚，激活炎症和氧化应激，并影响胰岛素信号传导，进一步抑制线粒体功能，推动DKD进展。因此，深入了解DKD中线粒体功能障碍与足细胞脂代谢的关联对DKD治疗十分重要。本文论述DKD、线粒体功能障碍、足细胞脂代谢的基本概况，及其相互作用，同时探讨了DKD治疗现状，以期为DKD的研究和治疗提供参考。

关键词：糖尿病肾病终末期肾病线粒体功能障碍足细胞脂代谢