Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

作     者：武辰飞 陈允峰 陆海 黄晓明 任芳芳 陈敦军 张荣 郑有炓 

作者机构：Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materialsand School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Peter Grunberg Research CenterNanjing University of Posts and TelecommunicationsNanjing 210003China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第5期

页      面：321-325页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080503[工学-材料加工工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the Key Industrial R&D Program of Jiangsu Province,China(Grant No.BE2015155) the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province,China the Fundamental Research Funds for the Central Universities,China(Grant No.021014380033) 

主　　题：amorphous indium–gallium–zinc–oxide thin-film transistors contact resistance surface potential 

摘      要：In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.