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SiCOH薄膜的双频等离子体刻蚀研究

SiCOH薄膜的双频等离子体刻蚀研究

作者：徐轶君苏州大学

学位级别：硕士

超大规模集成电路中器件密度的提高、特征线宽的减小导致互连线之间的阻容耦合不断增大,从而使信号传输延时、功耗增大、噪声增大。为了解决这些问题,用低介电常数(low-k)和超低介电常数(ultralow-k, k < 2)材料替代传统的SiO2层间绝缘... 详细信息

超大规模集成电路中器件密度的提高、特征线宽的减小导致互连线之间的阻容耦合不断增大,从而使信号传输延时、功耗增大、噪声增大。为了解决这些问题,用低介电常数(low-k)和超低介电常数(ultralow-k, k < 2)材料替代传统的SiO2层间绝缘介质,成为可能的选择。作为低k和超低k材料中最有前景的候选者,多孔超低k的SiCOH材料受到广泛关注。作为应用于超大规模集成电路中的低k材料,SiCOH薄膜的刻蚀研究极其重要。与传统SiO2介质的刻蚀相比较,由于SiCOH薄膜中存在孔隙,因此刻蚀率随着薄膜密度的降低而增加,从而导致薄膜粗糙度增加、侧向微枝结构的形成和刻蚀深度发生改变,结果难以实现SiCOH薄膜刻蚀过程的精确控制。为实现SiCOH薄膜刻蚀的精确控制,要求刻蚀时的碳氟等离子体是富含F的等离子体,并且离子能量可以独立控制,因此本文采用CHF3的双频电容耦合等离子体(DF-CCP)开展了SiCOH薄膜的刻蚀研究。论文重点研究了13.56MHz/2MHz、27.12MHz/2MHz、60MHz/2MHz双频电容耦合放电的CHF3等离子体特性、SiCOH薄膜的刻蚀特性。结果表明,采用双频等离子体技术通过提高低频功率可以实现SiCOH薄膜的可控刻蚀,通过提高高频频率可以降低SiCOH薄膜的刻蚀功率。结合等离子体特性的分析,SiCOH薄膜的可控刻蚀与低频功率和高频频率的提高所导致的等离子体中F的增加、CF2的抑制有关。

关键词：双频电容耦合等离子体 SiCOH薄膜刻蚀 CHF3等离子体

浅析新时代背景下中学生课堂德育教育渗透的创新

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浅析新时代背景下中学生课堂德育教育渗透的创新

Effect of CHF_3 Plasma Treatment on the Characteristics of SiCOH Low-k Film

全国科研理论学术研究大会

作者：邵承伟徐轶君通化市第二十中学校吉林省通化市职业教育中心

随着新时代的进步,很多方面都产生了翻天覆地的变化。科技的进步,带给了人们思想进步的新潮,而对思想进行最大影响的行业就是教育行业,因此教育行业有了更高的要求,他在传授学生知识技巧的基础上,提出了培养学生优秀品德的要求,甚至将... 详细信息

随着新时代的进步,很多方面都产生了翻天覆地的变化。科技的进步,带给了人们思想进步的新潮,而对思想进行最大影响的行业就是教育行业,因此教育行业有了更高的要求,他在传授学生知识技巧的基础上,提出了培养学生优秀品德的要求,甚至将品德教育凌驾于知识教育之上。网络上也流行着许多观点,人可以没有文化,但不能没有素养与品德。优秀的品格,会让一个人的言行举止更加的适用于这个社会,有了正确的社会价值观念才能在日后的人生旅途上少走弯路。因此在中学阶段,学生的德育教育是十分重要的,文章将中学生的德育教育问题作为研究的方向进行简单的分析。

关键词：中学教育德育教育创新研究

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Plasma Science and Technology 2009年第6期11卷 674-678页

作者：邢振宇叶超袁静徐轶君宁兆元 Jiangsu Key Laboratory of Thin Films School of Physics Science and TechnologySoochow University

The characteristics of SiCOH low dielectric constant film treated by a trifluromethane （CHF3） electron cyclotron resonance （ECR） plasma was investigated. The flat-band voltage VFB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF3 plasma treatment of the SiCOH film led to a reduction in both the fiat-band voltage VFB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film＇s characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C：F deposition at the surface of the SiCOH film.

关键词： CHFa plasma treatment SiCOH low-k film

CHF3 Dual-Frequency Capacitively Coupled Plasma by Optical Emission Spectroscopy

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Chinese Physics Letters 2008年第8期25卷 2942-2945页

作者：徐轶君叶超黄晓江袁静邢振宇宁兆元 School of Physics Science and Technology Jiangsu Key Laboratory of Thin Films Soochow University Suzhou 215006

We investigate the intermediate gas phase in the CHFs 13.56 MHz/2 MHz dual-frequency capacitively couple plasma （CCP） for the SiCOH low dielectric constant （low-k） film etching, and the effect of 2MHz power on radicals concentration. The major dissociation reactions of CHF3 in 13.56MHz CCP are the low dissociation bond energy reactions, which lead to the low F and high CF2 concentrations. The addition of 2MHz power can raise the probability of high dissociation bond energy reactions and lead to the increase of F concentration while keeping the CF2 concentration almost a constant, which is of advantage to the SiCOH low-k films etching. The radical spatial uniformity is dependent on the power coupling of two sources. The increase of 2 MHz power leads to a poor uniformity, however, the uniformity can be improved by increasing 13.56 MHz power.

关键词： the power-law exponents precipitation durative abrupt precipitation change

Effect of Low-frequency Power on F, CF_2 Relative Density and F/CF_2 Ratio in Fluorocarbon Dual-Frequency Plasmas

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Plasma Science and Technology 2010年第5期12卷 566-570页

作者：黄宏伟叶超徐轶君袁圆施国峰宁兆元 School of Physics Science and Technology Jiangsu Key Laboratory of Thin FilmsSoochow University

Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.

关键词： fluorocarbon plasma dual-frequency discharge low-k films etching

C_2F_6 /O_2 /Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Film

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Plasma Science and Technology 2012年第1期14卷 48-53页

作者：袁颖叶超陈天葛水兵刘卉敏崔进徐轶君邓艳红宁兆元 School of Physics Science and Technology Jiangsu Key Laboratory of Thin FilmsSoochow University

This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency （LF） power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.

关键词： fluorocarbon plasma dual-frequency discharge low-k films etching

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跨临界CO_2汽车空调系统的有效能分析

家电科技 2004年第2期 101-103页

作者：石润富姜培学徐轶君清华大学热能工程系

文通过数值计算,对跨临界CO2汽车空调系统进行了有效能分析,计算讨论了在不同的内部换热器高压侧流体出口温度,以及不同的压缩机吸气过热度的情况下,系统的制冷系数(COP)、单位有效能损失与有效能效率随着高压侧压力变化的情况;同时还... 详细信息

文通过数值计算,对跨临界CO2汽车空调系统进行了有效能分析,计算讨论了在不同的内部换热器高压侧流体出口温度,以及不同的压缩机吸气过热度的情况下,系统的制冷系数(COP)、单位有效能损失与有效能效率随着高压侧压力变化的情况;同时还分析了在不同的蒸发压力下,系统有效能效率随着高压侧压力的变化情况。

关键词：汽车空调制冷剂冷冻剂制冷材料 CO2 二氧化碳有效能效率交换器换热器热交换器侧压力吸气过热度压缩机压气机制冷系数蒸发压力有效能分析跨临界

Photoluminescence of silicone oil treated by fluorocarbon plasma

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Chinese Physics B 2012年第9期21卷 500-504页

作者：陈天叶超袁颖邓艳红葛水兵徐轶君宁兆元潘小平王振明 School of Physics Science and TechnologyJiangsu Key Laboratory of Thin FilmsSoochow University Joint Research Laboratory of Jiemei Biomedical Engineering Instrument Soochow University

We investigated photoluminescence characteristics of silicone oils treated by C2F6 and CHF3 plasma. The silicone oil treated by the C2F6 plasma emitted a white light mainly composed of 415 nm, 469 nm, and 554 nm emissions, while that treated by the CHF3 plasma emitted a pink light （415 nm）. Fourier transformed infrared spectroscopy and Raman spectroscopy studies showed that the photoluminescence was correlated with the Si-C bond, the carbon-related defects and the oxygen vacancies. It was suggested that the light emitting at 554 nm was related to the Si-C bond and the carbon-related defects, while the pink emission at 415 nm was related to the oxygen vacancies.

关键词： photoluminescence fluorocarbon plasma silicone oil

低频功率对60MHz/20MHz双频C2F6/Ar/O2等离子体化学特性及SiCOH低k薄膜刻蚀的影响

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低频功率对60MHz/20MHz双频C2F6/Ar/O2等离子体化学特性及SiCOH低...