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电子技术应用 2004年第1期30卷 78-80页

作者：吕士龙马春排蔡琳华西安交通大学生命学院 710049

介绍了一种基于无线收发模块和单片机的监护系统的设计,阐述了系统的基本原理及硬件的实现。

关键词：无线收发模块单片机临床监护心电监测 PTR2000 数字温度传感器

High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm

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Chinese Physics Letters 2008年第11期25卷 4174-4176页

作者：吕士龙宋志棠张挺封松林 Nanotechnology Laboratory Research Center of Functional Semiconductor Film Engineering and Technology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Seiences~ Shanghai 200050 Graduate School of the Chinese Academy of Sciences Beijing 100049

Si16Sbs4-based line cell phase change random access memory （PCRAM）, in which the Si16Sbs4 phase change line is contacted by TiN electrodes with a nanoscale gap, is fabricated by electron beam lithography. The lowest current and measured pulse width for RESET operation are 115 μA and 18 ns, respectively. The measured shortest pulse width for recrystallization is 110ns, with applied pulse amplitude of 1.5 V. SET and RESET currents for line cells with different line lengths are determined. Endurance of 106 cycles with a resistance ratio of above 800 has been achieved.

关键词： the power-law exponents precipitation durative abrupt precipitation change

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小型微纳米图形电子束曝光制作系统(英文)

纳米技术与精密工程 2010年第4期8卷 290-294页

作者：殷伯华方光荣刘俊标靳鹏云薛虹吕士龙中国科学院电工研究所北京100190 中国科学院上海微系统与信息技术研究所上海200050

为了满足科学实验过程中对制作半导体器件和微纳米结构的需要,同时避免受到昂贵的工业级电子束曝光(electron beam lithography,EBL)机的条件制约,构建了一种基于普通扫描电子显微镜(scanning electron microsco-py,SEM)的桌面级小型电... 详细信息

为了满足科学实验过程中对制作半导体器件和微纳米结构的需要,同时避免受到昂贵的工业级电子束曝光(electron beam lithography,EBL)机的条件制约,构建了一种基于普通扫描电子显微镜(scanning electron microsco-py,SEM)的桌面级小型电子束曝光系统.建立了以浮点DSP为控制核心的高速图形发生器硬件系统.利用线性计算方法实现了电子束曝光场的增益、旋转和位移的校正算法.在本曝光系统中应用了新型压电陶瓷电机驱动的精密位移台来实现纳米级定位.利用此位移台所具有的纳米定位能力,采用标记追逐法实现了电子束曝光场尺寸和形状的校准.电子束曝光实验结果表明,场拼接及套刻精度误差小于100 nm.为了测试曝光分辨率,在PMMA抗蚀剂上完成了宽度为30 nm的密集线条曝光实验.利用此系统,在负胶SU8和双层PMMA胶表面进行了曝光实验;并通过电子束拼接和套刻工艺实现了氮化物相变存储器微电极的电子束曝光工艺.

关键词：扫描电子显微镜(SEM) 电子束曝光(EBL) 图形发生器纳米结构

Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory

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Chinese Physics Letters 2010年第2期27卷 295-298页

作者：吕士龙宋志棠刘燕封松林 State Key Laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050 Graduate School of the Chinese Academy of Sciences Beijing 100049

Phase change random access memory （PC-RAM） based on Si2Sb2Te5 with a Pt tapered heating electrode （Pt-THE）, which is fabricated using a focus ion beam （FIB）, is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.

关键词： Condensed matter: electrical magnetic and optical Electronics and devices Semiconductors Nanoscale science and low-D systems

Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

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Chinese Physics Letters 2015年第6期32卷 184-187页

作者：范茜陈后鹏王倩王月青吕士龙刘燕宋志棠冯高明刘波 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050 Shanghai Key Laboratory of Nanofabrication Technology for Memory Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050 University of Chinese Academy of Sciences Beijing 100049 United Laboratory Semiconductor Manufacturing International Corporation Shanghai 201203

A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.

关键词： PCRAM Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

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相变存储器曝光工艺研究

微纳电子技术 2006年第6期43卷 298-300页

作者：吕士龙宋志棠封松林中国科学院上海微系统与信息技术研究所上海200050

介绍了在相变材料上的曝光工艺研究,得出了相应的工艺条件,研究了邻近效应的影响以及利用邻近效应制作nm量级间隔大电极对的方法。

关键词：曝光相变材料邻近效应电极

Scaling properties of phase-change line memory

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Chinese Physics B 2012年第9期21卷 554-558页

作者：杜小锋宋三年宋志棠刘卫丽吕士龙顾怡峰薛维佳席韡 State Key Laboratory of Functional Materials for Informatics Laboratory of NanotechnologyShanghai Institute of Micro-system and Information TechnologyChinese Academy of Sciences

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

关键词： phase-change memory line structure scaling properties three-dimensional simulation

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

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Journal of Semiconductors 2015年第5期36卷 181-186页

作者：高丹刘波李莹宋志棠任万春李俊焘许震吕士龙朱南飞任佳栋詹奕鹏吴汉明封松林 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information TechnologyChinese Academy of Sciences University of Chinese Academy of Sciences Semiconductor Manufacturing International Corporation

Phase change memory （PCM） has been regarded as a promising candidate for the next generation of nonvolatile memory. To decrease the power required to reset the PCM cell, titanium nitride （TIN） is preferred to be used as the bottom electrode of PCM due to its low thermal and suitable electrical conductivity. However, during the manufacture of PCM cell in 40 nm process node, abnormally high and discrete distribution of the resistance of TiN bottom electrode was found, which might be induced by the surface oxidation of TiN bottom electrode during the photoresist ashing process by oxygen plasma. In this work, we have studied the oxidation of TiN and found that with the increasing oxygen plasma ashing time, the thickness of the TiO2 layer became thicker and the state of the TiO2 layer changed from amorphous to crystalline, respectively. The resistance of TiN electrode contact chain with 4-5 nm TiO2 layer was confirmed to be almost three-orders of magnitude higher than that of pure TiN electrode, which led to the failure issue of PCM cell. We efficiently removed the oxidation TiO2 layer by a chemical mechanical polishing （CMP） process, and we eventually recovered the resistance of TiN bottom electrode from 1×10^5Ω/via back to 6×10^2 Ωvia and successfully achieved a uniform resistance distribution of the TiN bottom electrode.

关键词： PCM oxygen plasma ashing titanium nitride bottom electrode oxidation CMP

基于贝叶斯和统计相似度量测的水下自主定位方法

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控制与决策 2025年第01期 48-54页

作者：黄浩乾吕奥奇王迪张昱曈河海大学人工智能与自动化学院

复杂的水下环境通常会引起信号传播延迟或带来量测野值,从而产生量测丢失和非高斯噪声问题,导致水下自主定位的精度降低.为了解决这些问题,提出一种基于贝叶斯推断和统计相似度量测的水下自主定位方法.首先,该定位方法使用最大后验估计... 详细信息

复杂的水下环境通常会引起信号传播延迟或带来量测野值,从而产生量测丢失和非高斯噪声问题,导致水下自主定位的精度降低.为了解决这些问题,提出一种基于贝叶斯推断和统计相似度量测的水下自主定位方法.首先,该定位方法使用最大后验估计方法来判断量测丢失是否发生.如果接收到此刻的量测信息,则采用不动点迭代方法最大化统计相似度量测的下界,以逼近真实的噪声协方差矩阵,从而获得更准确的状态估计和误差协方差矩阵;如果没有接收到量测信息,则只输出一步预测的状态估计和误差协方差矩阵,以提高该方法的鲁棒性.仿真和海试实验验证结果表明,所提出的水下自主定位方法相较于其他的定位方法具有更高的定位精度和更好的鲁棒性.

关键词：统计相似度量测量测丢失非高斯噪声不动点迭代水下自主定位贝叶斯推断

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基于FS-SIA的毁伤预测神经网络超参数优化方法

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郑州大学学报(理学版) 2025年第02期 1-7页

作者：佘维吕钟毓邢召伟王世豪徐旺旺田钊郑州大学网络空间安全学院嵩山实验室郑州市区块链与数据智能重点实验室河南省科技创新促进中心

针对毁伤预测中神经网络超参数设置及调试过程较为复杂的问题，提出一种基于特征选择结合群体智能(feature selection and swarm intelligence algorithm, FS-SIA)的超参数优化方法，用于在毁伤预测中对神经网络进行超参数的搜索和优化... 详细信息

针对毁伤预测中神经网络超参数设置及调试过程较为复杂的问题，提出一种基于特征选择结合群体智能(feature selection and swarm intelligence algorithm, FS-SIA)的超参数优化方法，用于在毁伤预测中对神经网络进行超参数的搜索和优化。首先，通过多种特征排序方法确定毁伤特征的重要性，选取公共的特征偏序子集用于模型训练。其次，针对具体的神经网络模型，分别采用多种群体智能算法进行超参数的搜索和优化。最后，得出特征集性能最优的超参数训练模型。实验结果表明，相较于未经特征排序而单纯采用群体智能算法的其他超参数优化模型，所提方法在毁伤预测中具有更快的收敛速度和更高的准确率。

关键词：神经网络超参数优化特征选择群体智能毁伤预测

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