Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory
Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory作者机构：State Key Laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050 Graduate School of the Chinese Academy of Sciences Beijing 100049
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2010年第27卷第2期
页 面：295-298页
核心收录：
学科分类：081704[工学-应用化学] 08[工学] 0817[工学-化学工程与技术] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）]
基 金：Supported by the National Basic Research Program of China under Grant Nos 2007CB935400 and 2006CB302700 the National High-Technology Development Program of China (2008AA031402) Science and Technology Council of Shanghai (0752nm013 07QA14065 07SA08 08DZ2200700 08JC1421700) the National Nature Science Foundation of China (60776058) and Chinese Academy of Sciences (083YQA1001)
主 题：Condensed matter: electrical magnetic and optical Electronics and devices Semiconductors Nanoscale science and low-D systems
摘 要：Phase change random access memory （PC-RAM） based on Si2Sb2Te5 with a Pt tapered heating electrode （Pt-THE）, which is fabricated using a focus ion beam （FIB）, is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
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