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检索条件"作者=3. of Nuclear Science and Technology,Sichuan University,Chengdu 610064,P.R.china 2.{3. of Plasma Surface Interactions,Guizhou University,55002.,Guiyang,P.R.china 3.FOM {3. for Plasma {2.,3.3. MN Nieuwegein,The Netherlands"

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Temperature Effect On H Interacting With SiC(100):MD Study

Temperature Effect On H Interacting With SiC(100):MD Study

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第十五届全国等离子体科学技术会议

作者： SUN Wei-zhong~1,ZHAO Cheng-li~2.ZHANG Jun-yuan~1,LU Xiao-dan~2.F.Gou~(1,3.) (1.Key Laboratory of radiation physics and technology,Ministry of Education Institute of {2. science and technology,sichuan university,chengdu 610064,p.r.china 2.Institute of plasma surface interactions,guizhou university,{12.,guiyang,p.r.china 3.fom Institute for plasma physics,3.3. mn nieuwegein,the netherlands)

Molecular dynamics simulations were performed to study interactions between atomic hydrogen and silicon *** present study,we focus on the effect of the surface temperature on H interacting with silicon *** simulation results show that with increasing surface temperature,the retention of H atoms in the sample decreases *** depth profile analysis shows that after the sample is modified by H bombardment,the density of H atoms is greater than those of Si and C atoms near the interface region between the H-containing region and the ***,near the surface region the density of H,Si and C atoms are almost *** the modified layer,the bonds are consisted of Si-C and Si-H and *** fraction of bonds Si-C is the *** few C-H bonds are present.

关键词： molecular dynamic surface temperature retention atomic density bond

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Molecular Dynamic Simulations of the Temperature Effect On H Interacting With SiC surface

Molecular Dynamic Simulations of the Temperature Effect On H...

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第十四届全国核物理大会暨第十届会员代表大会

作者： SUN Wei-zhong1, ZHAO Chen-li2, LIU Hua-min1, ZHANG Jun-yuan1, LIN Li-wei1, LV Xiao-dang2,pAN Yu-dong3. GOU Fu-jun 1,4? (1.Key Laboratory of radiation physics and technology (sichuan university), Ministry of Education Institute of nuclear {3. and technology, sichuan university, chengdu 610064, p. r. china 2. Institute of plasma surface interactions, guizhou university, 55002., {13., p. r. china 3. Southwestern Institute of physics, chengdu 610041, p. r. china 4. fom Institute for plasma physics, 3.3. mn nieuwegein, the netherlands)

Due to its chemical inertness to hydrogen and its isotopes,high thermal conductivity and high-temperature stability,silicon carbide has been used as plasma-facing materials in tokomak[1-3..Therefore,it is necessary to... 详细信息

关键词： fusion material molecular dynamic retention atomic density bond density

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Effect of the sample temperature on redeposition of C on CH film:MD study

Effect of the sample temperature on redeposition of C on CH ...

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第十四届全国核物理大会暨第十届会员代表大会

作者： Zhao Cheng-li1,2, Sun Wei-zhong3. He ping-ni1,2,Liu Hua-min3. Zhang Jun-yuan3. LIN Li-wei3. LV Xiao-dan1, F. Gou 3.4 (1. Institute of plasma surface interactions, {3., guiyang 55002., china 2. College of science, {3., guiyang 55002., china 3. Key Lab of radiation physics & technology Ministry of Education, {13., china 4. fom Institute for plasma physics, 3.3. mn nieuwegein, the netherlands)

In order to understand the redeposition of hydrocarbon occurring in fusion[1],molecular dynamics(MD)simulations were used to study the effect of the surface temperature on the formation of amorphous hydrocarbon film[2...

关键词： fusion molecular dynamics temperature CH film

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SiH interacting with Si surfaces:MD study

SiH interacting with Si surfaces:MD study

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第十五届全国等离子体科学技术会议

作者： Zhao Cheng-li~(1,2),Sun Wei-zhong~3.Zhang Jun-yuan~3.Chen Feng~(1,2),He ping-ni~1,Lu Xiao-dan~1, F.Gou~(3.4+) (1.Institute of plasma surface interactions,{3.,guiyang 55002.,china 2.College of science,{3.,guiyang 55002.,china 3.Key Lab of radiation physics & technology Ministry of Education,{13.,china 4.fom Institute for plasma physics,3.3. mn nieuwegein,the netherlands)

Silicon films are deposited using plasma enhanced chemical vapor deposition(pECVD) through SiHi-containing glow *** this process,interactions between radicals(H,SiH,SiH and SiH ***) and the silicon {2. play an important role during ***,it is very difficult to experimentally characterize these *** order to understand the interaction mechanism and formation of the film,molecular dynamics(MD) simulations were used to study the effect of incident energy on formation of amorphous silicon(α-Si:H) *** incident energies were chose to 1,10,2.,50,75 and 100 *** simulation results show that with increasing incident energy,the dissociation rate of SiH increases,the deposition rate of H atoms decrease and deposition rate of Si atoms almost remain *** is found that the sputtering and scattering of H atoms increase with increasing incident *** addition,in formed films SiH group is dominant hydrogenated amorphous film.

关键词： deposited pECVD molecular dynamics hydrogenated amorphous silicon film

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CH+ interacting with fusion material silicon carbide:MD study

CH+ interacting with fusion material silicon carbide:MD stud...

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第十四届全国核物理大会暨第十届会员代表大会

作者： HE ping-ni1,2, SUN Wei-zhong3. ZHAO Chen-li1,2, LIU Hua-min3. ZHANG Jun-yuan3. LIN Li-wei3. LV Xiao-dan1, F. Gou 3.4 1Institute of plasma surface interactions, {3., guiyang 55002., china 2College of science, {3., guiyang 55002., china 3.ey Lab of radiation physics & technology Ministry of Education, {13., china 4fom Institute for plasma physics, 3.3. mn nieuwegein, the netherlands

Due to its high thermal conductivity,chemical inertness,extreme hardness and high-temperature stability,silicon carbide has been used in

关键词： fusion molecular dynamics CH films retention density

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SiH Interacting with Si surface and Formation of Hydrogenated Silicon Films:MD study

SiH Interacting with Si surface and Formation of Hydrogenate...

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第十四届全国核物理大会暨第十届会员代表大会

作者： Chen Feng1,2, Zhao Cheng-li1,2, Sun Wei-zhong3. He ping-ni1,Liu Hua-min3. Zhang Jun-yuan3. Lu Xiao-dan1, F. Gou 3.4 1Institute of plasma surface interactions, {3., guiyang 55002., china 2College of science, {3., guiyang 55002., china 3.ey Lab of radiation physics & technology Ministry of Education, {13., china 4fom Institute for plasma physics, 3.3. mn nieuwegein, the netherlands

Silicon films can be deposited inexpensively at low temperatures and uniformly over large areas using plasma enhanced chemical vapor deposition(pECVD)through

关键词： deposited pECVD molecular dynamics hydrogenated amorphous silicon film

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Effects of Current on energy transport of argon plasma in the cascaded arc

Effects of Current on energy transport of argon plasma in th...

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第十五届全国等离子体科学技术会议

作者： J.Zhang~1,p.Wang~1,F.Chen~2.W.Sun~1,X.Lv~2.p.He~2.F.Gou~(1,3.) 1Key Laboratory of radiation physics and technology({2.),Ministry of Education Institute of nuclear {3. and technology,{2.,chengdu 610064,p.r.china 2.Institute of plasma surface interactions,{12.,55002.,{13.,p.r.china 3.fom Institute for plasma physics,3.3. mn nieuwegein,the netherlands

In this study pIASIMO was used to investigate the effect of current on energy exchanging in argon plasmas produced in the cascaded arc,the currents of 3., 50,70,90 A were *** simulation results show that from the inlet to the outlet along the symmetry axis,the ohmic dissipation density *** increasing current,the ohmic dissipation density *** energy exchanging is contributed by elastic collisions near the *** the energy transferring by inelastic collisions increases and then *** increasing current,the energy transferring by inelastic collisions increases and reaches the maximum at the outlet.

关键词： cascaded arc non-LTE ohmic dissipation elastic inelastic

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Molecular dynamics simulation of the energy effect SiH3. interaction with Si surface

Molecular dynamics simulation of the energy effect SiH3+ int...

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第十五届全国等离子体科学技术会议

作者： Tian Shu-ping~1,Sun Wei-zhong~1,Zhang yan-po~1,Zhao Cheng-li~2.Chen Feng~2.F.Gou~(1,3. (1.Key Lab of radiation physics & technology Ministry of Education,{2.,china 2.College of {3.,guizhou university,guiyang 55002.,china 3.fom Institute for plasma physics,3.3. mn Nie jwegein,{12.)

During fabricating hydrogenated silicon films using plasma enhanced chemical vapor deposition method(pECVD),the interactions between SiH ions and {2.s signifincantly affect performances of the deposited *** order to understant the interactions at the atomic scale,we report the molecular dynamics simulations of interactions between SiH and Si *** simulation results show that the deposition rate of Si atoms decrease with increasing incident energy and the deposition rate of H atoms first increased and then *** sedimentary Si,H atoms and the sample {2. atoms form hydrogenated amorphous silicon *** hydrogenated amorphous silicon films SiH,SiH and SiH groups are *** the film SiH-SiH, SiH-SiH and SiH-SiH bonds are dominant and few SiH-SiH and SiH-SiH bonds are *** film component changes with depth of hydrogenated amorphous silicon *** discuss the deposition mechanism.

关键词： Molecular dynamics simulation deposition rate hydrogenated amorphous silicon film film component.

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