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Self-depleted CuSCN at back contact for high performance CZT...

Self-depleted CuSCN at back contact for high performance CZTSSe solar cells

作     者:Yixiong Ji Xiangyun Zhao Fangyang Liu Paul Mulvaney 

作者单位:School of Metallurgy and Environment Central South University ARC Centre of Excellence in Exciton Science School of Chemistry University of Melbourne 

会议名称:《第九届新型太阳能材料科学与技术学术研讨会》

会议日期:2022年

学科分类:08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)] 

关 键 词:Self-depleted CuSCN back contact CZTSSe solar cell 

摘      要:Optimization of the back contact interface is crucial for improving the performance of Cu ZnSnS(CZTS) thin film solar cells. In this paper, we employ self-depleted CuSCN as an intermediate layer at the Mo/CZTS interface to improve the quality of the back contact. This CuSCN layer, obtained by aqueous solution processing eliminates multi-layer crystallization of the absorber and suppresses the undesirable reaction between Mo and selenium(Se) during the selenization process. By preventing the reaction of Mo and CZTSSe which triggers the formation of secondary phases, a highly crystalline, single-layer CZTSSe absorber is achieved. The single-layer CZTS absorber exhibits reduced carrier recombination, enhanced carrier density and there is a reduced conduction band offset(CBO) at the CZTSSe/CdS junction. The improved back contact allows a 11.09% powerconversion-efficiency to be achieved.

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