Photoexcited Carrier Dynamics within Alloyed CdSeTe Colloidal Quantum Dots and at the CdSeTe/TiO2 Interface
作者单位：School of Mathematics and PhysicsUniversity of Science and Technology Beijing
会议名称：《第八届新型太阳能材料科学与技术学术研讨会》
会议日期：2021年
学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）]
关 键 词：alloyed CdSeTe quantum dot carrier dynamics transient absorption
摘 要：Alloying strategy in quantum dots(QDs) has shown great advantages in regulating photophysical properties and improving the performance of photovoltaic devices. Typically, CdSeTe alloy QD is proved to be a superior photosensitizer, and has presented great potential in constructing high-efficient quantum dot solar cells. However, systematic analysis for the carrier dynamics is still lacking. The carrier dynamics within CdSeTe colloidal QDs and at the TiO/CdSeTe interface has been studied in detail by transient absorption(TA) spectroscopy and photoluminescence(PL) spectroscopy. TA results show that the gradient component of CdSeTe QDs leads to different electronic transition properties distinct from those of their parent binary components. Temperature-dependent time-resolved PL spectra for the CdSeTe/TiO demonstrate that PL lifetime decreases from 13.54 to 3.08 ns with increasing temperature from 10 to 300 K. Moreover, the electron transfer rate increases more quickly when temperature exceeds 250 K. In addition, it is confirmed that the crystallization characteristics of TiO have a significant impact on the interfacial carrier dynamics. A faster electron transfer from CdSeTe QDs to rutile TiO(R-TiO) has been obtained than that to anatase TiO(5.65×108/s vs 3.21×108/s). Both QDs adsorption and electron transfer properties closely dependent on the crystal orientation of R-TiO single crystal. CdSeTe QDs attached to the(100) R-TiO single crystal surface achieve the fastest electron transfer rate than other R-TiO orientations of(111),(110) and(001).