Pressure confinement effect in monolayer and few layer MoS2
作者单位：State Key Laboratory of Superhard Materials College of Physics Jilin University
会议名称：《第十八届中国高压科学学术会议》
会议日期：2016年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：the National Natural Science Foundation of China for funding(grant nos.21104024,11274137,11574112 and 11474127) the Functional Research Funds for the Central Universities(JCKY-QKJC07) the Open Project of State Key Laboratory of Superhard Materials(Jilin University),China(Grant No.201403)
摘 要：Two-dimensional(2D)materials with similar layered hexagonal structure like graphene have attracted considerable attention,monolayer molybdenum disulfide(MoS),as one of the important transition metal dichalcogenides,is a kind of semiconductor with strong light absorption and emission ability and has received extensive *** this study,we investigate the pressure confinement effect on monolayer MoS by in situ high pressure Raman and photoluminescence(PL)***