Atomic configuration in core structure of Lomer dislocation in Si0.76Ge0.24/Si

作     者：D. Wang, H. Chen, F. H. Li, K. Kawasaki and T. Oikawa Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080 JEOL-LTD,1-2 Musashino 3-chome, Akishima, Tokyo 196 

会议名称：《CCAST“先进高分辨电子显微学—理论和应用”研讨会》

会议日期：2002年

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

摘      要：正 The core structure of a Lomer dislocation in SiGe/Si system has been revealed at atomic level. This is attained by applying the image deconvolution technique in combination with dynamical diffraction effect correction to the high-resolution image taken with a 200 kV field-emission gun high-resolution electron microscope. The Lomer dislocation has a Homstra-like core. The contrast of the image simulated on the basis of derived atomic configuration is in agreement with that of the experimental image.