CURRENT INJECTION TYPE SUPERCONDUCTIVE TRANSISTOR MADE FROM SINGLE LAYER STRUCTURE HIGH Tc OXIDE SUPERCONDUCTOR
作者单位：Research Center of Large Scale Integrated Circuit（LSI）Shanghai Jiao Tong University
会议名称：《The Second International Conference on Solid State and Integrated Circuit Technology》
会议日期：1989年
学科分类：080903[工学-微电子学与固体电子学] 080801[工学-电机与电器] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：supported by National Natural science Foundation of China
摘 要：正Current Injection type Single layer structure Superconductive Transistor made from High Tc Oxide Superconductor （HOSCISST） has been *** principles of the superconductive transistor have been analysed by using Feynman method and RSJ *** is a new superconducting transistor which can be made from the single layer structure（thin film or bulk sheets） materials of the high Tc oxide superconductors YBCO,LBCO,LSCO,BSCCO and TCBCO et al. The expressions,estimations and experimenal results of small signal gain of HOSCISST are given in this *** conclusion is that the HOSCISST isapromlsing high Tc oxide superconducting three terminal device of high speed and low power,and has the ability to gain and invert.