GROWTH AND PROPERTIES OF FeSi2 BY MEVVA IMPLANTATION AND RTA

作     者：Weidong Qian Tonghe Zhang Hong LiangRadiation Beam & Material Engineering Lab. Institute of Low Energy Nuclear Physcics Beijing Normal University China 100875 

会议名称：《1995 4th International Conference on Solid-State and Integrated Circuit Technology》

会议日期：1995年

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

摘      要：正 The Fe silicides were fabricated using MEVVA Fe ion implantation into P-Si with different ion flux Φ. The relation of sheet resistance R□with annealing temperature Ta was obtained usingfour-point probe. It was found that R□decreased rapidly with increasing Φand Ta. XRD analysis shew that the semiconductor phase β- FeSi, was formed for as-implanted sample and post annealed sample with the temperature from 800℃to 1000℃. It was proved that there was a phase transition from β- FeSi2 （semiconducting ） to α- FeSi2 （metallic） after the samples were annealed at 1100℃for 10s.