Study on the Fabrication of Low Gradient Photoresist Grating Masks
会议名称：《2007亚洲光电子会议全息/衍射光学及应用分会场》
会议日期：2007年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
关 键 词：Diffractive optics holography photoresist grating masks the control of the profile
摘 要：To alleviate the difficulty of ion beam etching, it is essential to acquire the low gradient holographic photoresist grating masks as well as the high gradient ones （i.e. the rectangular holographic photoresist grating masks）. According to the ion beam etching experiments, the low gradient photoresist grating masks can effectively eliminate the redeposition. The control of the profile of holographic photoresist grating masks is investigated in this paper. Considering the effects of developing time and temperature of the developer on the response of photoresist and adopting the combination of computer simulation and experiments, a low gradient photoresist grating mask: 30% duty cycle at bottom and 65° gradient can be fabricated. The study indicates the increase of the developing time causes the diminish of the threshold volume of exposure while the increase of the slope of the linearity of photoresist response;the rise of the temperature of the developer leads to both the increase of the threshold volume of exposure and the slope of the linearity of photoresist response. As a result non-1:1 interferential exposure and low-temperature development are required in the fabrication of low gradient photoresist grating masks. The 1:7 interferential exposure and 15℃-development have been adopted in this experiment.