Dielectric Tunability of BaxSr1-xTiO3 Thin Films Grown on A Compliant Substrate

作     者：Hua-Ping WU~(1,*) Bin XU~1 Xiao-Yan LU~(2,*) 1 Key Laboratory of E&M(Zhejiang University of Technology),Ministry of Education & Zhejiang Province,Zhejiang University of Technology,Hangzhou 310032 2 School of Civil Engineering,Harbin Institute of Technology,Harbin 150090 

会议名称：《2011年全国压电和声波理论及器件应用研讨会》

会议日期：2011年

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Science Foundation of China(No.11002126 and 11002044) the Zhejiang Provincial Natural Science Foundation of China(No.Y6100425) the China Postdoctoral Science Foundation(No.20090460068) 

关 键 词：Dielectric tenability Ferroelectric thin film Stress control Compliant substrate 

摘      要：Great effort has been devoted to develop novel ferroelectric materials due to their wide applications in memories, microwave devices,and many other kinds of functional *** thin films with high dielectric constants and tunabilities,and low dielectric-loss tangents and leakage currents are one of the preferred ferroelectric materials employed in microwave devices in terms of their outstanding dielectric properties and good