Spin-dependent charge transport in organic semiconductors

作     者：J. H. Wei Y. Guo S. J. Xie L. M. Mei Department of Physics Shandong University Jinan China YiJing Yan Department of Chemistry Hong Kong University of Science and Technology Kowloon Hong Kong 

会议名称：《Third Conference of the Asian Consortium for Computational Materials Science》

会议日期：2005年

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

摘      要：正Combining the Su-Schrieffor-Heeger （SSH） model and the non-equilibrium Green’s function （NEGF） formalism, we have theoretically studied controllable conductance switching of the organic spintronics and interpreted it with the voltage-induced polaron picture. The exponential decay of magnetorosistance with bias voltage is qualitatively consistent with the experimental result.