THE INVESTIGATION OF Al-BSF PASSIVATION QUALITY

作     者：Chen Tian Rongqiang Cui Meizhen Huang Jianqiang Wang Jing An Solar Energy Institute of Shanghai Jiao Tong University Dongchuan Road 800# Shanghai 200240,China Jingxiao Wang Jianhua Huang Xiang Li Chunjian Wu SJTU-Solarfun Photovoltaic Research&Development Center Humin Road 1871# Shanghai 201109,China Jiabin Du SJTU-LDK Solar Energy Joint Lab Shanghai 200240,China 

会议名称：《2007世界太阳能大会：太阳能与人类居住》

会议日期：2007年

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

摘      要：The screen-printed Al-back surface field (AI-BSF) is widely used to passivate the back surface of silicon solar *** order to increase the cost-effectiveness of solar cells,there is a strong trend to further reduce the wafer thickness down to at least 200μ*** the back surface recombination velocity (S) begins to strong influence solar cells performance when the minority carrier diffusion length approaches or exceeds device ***-BSF which can decrease S becomes much more important. Previously,most researchers utilized solar cell internal quantum efficiency (IQE) to analysis the quality of Al-BSF. But this method is could not characterize Al-BSF directly because of other *** this paper,the back-surface fields is formed using screen-printed Al layer on Cz P-type silicon directly followed sintering in belt furnace and we measure the minority carrier lifetime after *** theoretical calculation of the surface recombination velocity, it helps us to analysis AI-BSF passivation quality directly and effectively.