Electron Transport in InN
作者单位：Fachgebiet FestkorperelektronikTechnische Universitat Ilmenau98684 IlmenauPF 100565Germany
会议名称：《2006 8th International Conference on Solid-State and Integrated Circuit Technology》
会议日期：2006年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
摘 要：The paper provides an overview on the current understanding of electron transport-in wurtzite Indium Nitride(INN).First,recent findings concerning the bandgap of InN are reviewed and their consequences on electron transport are ***,applying the ensemble Monte Carlo method and new band structure data from the literature,the electron transport in InN is investigated in *** calculate a peak steady-state drift velocity of more than 5×10 cm/s at an electric field of 32 kV/cm,a pronounced transient velocity overshoot, and a remarkably high low-field mobility of 14 000 cm/Vs for undoped *** features of the electron transport in InN are compared to those in other semiconductors and the prospects of InN-based high-speed transistors are addressed.