The Properties of Nitrogenated Amorphous Carbon Films Grown by Microwave Surface-wave Plasma CVD: Effects of Gas Composition Pressure
作者单位：Department of Electrical and Electronic EngineeringChubu University1200 Matsumoto-choKasugai 487-8501Japan Department of Electrical and Electronic EngineeringChubu University1200 Matsumoto-choKasugai 487-8501Japan Department of Electrical and Electronic EngineeringChubu University1200 Matsumoto-choKasugai 487-8501Japan Department of Electronics and Information EngineeringChubu University1200 Matsumoto-choKasugai 487-8501Japan Department of Electronics and Information EngineeringChubu University1200 Matsumoto-choKasugai 487-8501Japan Department of Electronics and Information EngineeringChubu University1200 Matsumoto-choKasugai 487-8501Japan
会议名称：《第十五届国际光伏科学与工程大会》
会议日期：2005年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
关 键 词：Nitrogenated Amorphous Carbon Films MW SWP-CVD Gas Composition Pressure Films Properties
摘 要：正 Nitrogenated amorphous carbon （a-C:N） thin films were grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition （CVD） with various gas composition pressures （GCP）. The deposited a-C:N films were characterized for their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, X-rays photoelectron spectroscopy, fourier transform infrared spectroscopy and solar simulator measurements. Optical absorption coefficient is decreased with increasing GCP. The roughness of the a-C:N is found to be very smooth （about 0.50 nm）. The film deposited at 90 Pa exhibited relatively good photovoltaic action compared to the films deposited at other GCPs.