Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories
作者单位：Graduate School of Advanced Sciences of MatterHiroshima University Kagamiyama 1-3-1Higashi-Hiroshima 739-8530Japan
会议名称：《2006 8th International Conference on Solid-State and Integrated Circuit Technology》
会议日期：2006年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：supported in part by Grant-in Aids for scientific research of priority area(A) and for the 21st Century COE Program "Nanoelectronics for Tera-bit Information Processing" from the Ministry of Education Culture Sports Science and Technology of Japan
摘 要：正We have found that,for Si dots individually charged with a few electrons or holes,characteristic potential profiles with a dimple around the center of the charged Si dot are observed and can be interpreted in terms of the Coulomb repulsion among the charges retained in the dot. By an introduction of Ge core in Si dots,holes can be well-confined in the Ge core while electrons are stored in the Si clad because of the energy band discontinuity at the interface between the Si clad and the Ge *** influence of ionized impurity doping to Si-QDs on their electron charging and discharging characteristics has also been *** metal-oxide-semiconductor（MOS） capacitors and n-channel MOS field-effect-transistors （n-MOSFETs） with Si-QDs floating gates,distinct multiple-step charging to（or discharging from） the Si-QDs floating gate have been confirmed at room temperature,which are regulated presumably by redistribution of injected electrons in the Si-QDs floating gate for further electron injection（or emission）.