Microwave Performance of Heterojunction Vertical Dual Carrier Field Effect Transistors and Integrated Circuits.
作者单位：China Aerospace Corporation Beijing Normal University
会议名称：《2000 2nd International Conference on Microwave and Millimeter Wave Technology》
会议日期：1000年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
摘 要：正（1） Introduction. We have discovered and studied a new mode of operation of transistors and integrated *** reported in 1998 part of our theoretical and experimental *** this paper,we shall present the device physics theory and some of the d.c. measurement results of the third type of structure operating in this new mode of operation,in addition to the two other types of *** microwave performance of this structure is even better than the previous two types of structures.