On Integration-based Methods for MOSFET Model Parameter Extraction
作者单位：Solid State Electronics LaboratoryUniversidad Simon BolívarApartado Postal 89000Caracas 1080-AVenezuela
会议名称：《2008 9th International Conference on Solid-State and Integrated-Circuit Technology》
会议日期：2008年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
摘 要：正This article reviews integration-based model-parameter extraction methods for *** comprises three different methods that use the transfer characteristics measured under linear regime operation *** two other methods are included for extraction under saturation *** integration-based method to evaluate the location of a maximum value of a given function is also included. Finally,the possibility of evaluating distortion is briefly introduced.