Linear response Model of Si Single Electron Transistor

作     者：S.Zhou, J.F.Jiang, and Q.Y.CaiResearch Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, 200030, P. R. China 

会议名称：《2001 6～(th) International Conference on Solid-State and Integrated Circuit Technology》

会议日期：2001年

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

摘      要：Linear response model of semiconductor silicon singleelectron transistor(Si-SET)is *** Coulombisland of the Si-SET with a discrete level spectrum isweakly coupled to two electron reservoirs via barriers ofnano-tunneling *** reservoirs,named sourceand drain electrodes respectively,are taken to be inthermal equilibrium at temperature T and Fermi *** Si-SET is considered to be driven in linearresponse,i.e.,the conductance G is defined as G=I/V inthe limit V tends to *** analyze the conductancecharacteristics of the Si-SET,which make it possible tosimulate circuit characteristics of the Si-SET fromphysical parameters.