Linear response Model of Si Single Electron Transistor
会议名称:《2001 6~(th) International Conference on Solid-State and Integrated Circuit Technology》
会议日期:2001年
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
摘 要:Linear response model of semiconductor silicon singleelectron transistor(Si-SET)is *** Coulombisland of the Si-SET with a discrete level spectrum isweakly coupled to two electron reservoirs via barriers ofnano-tunneling *** reservoirs,named sourceand drain electrodes respectively,are taken to be inthermal equilibrium at temperature T and Fermi *** Si-SET is considered to be driven in linearresponse,i.e.,the conductance G is defined as G=I/V inthe limit V tends to *** analyze the conductancecharacteristics of the Si-SET,which make it possible tosimulate circuit characteristics of the Si-SET fromphysical parameters.