Influence of sputtering power on molybdenumdoped zinc oxide films grown by RF magnetron sputtering
作者单位：College of Physics and ElectronicsShandong Normal University Shandong College of Electronic Technology
会议名称：《第八届中国功能材料及其应用学术会议》
主办单位：China Instrument and Control Society;Instrument Functional Materials Branch;Natl. Instrum. Funct. Mat. Eng. Technol. Res. Ctr.;Chongqing Materials Research Institute;Chongqing Functional Materials Periodical Press
会议日期：2013年
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：Education Commission of Shandong Province [J1OLA04]
关 键 词：transparent conducting oxides molybdenum oxide zinc oxide magnetron sputtering
摘 要：Molybdenum-doped zinc oxide(MZO) films have beenprepared by RF magnetron sputtering on glass substrates at room *** structural,electrical and optical properties of the films vary with sputtering power from 15 W to 70 W areinvestigated.X-ray diffraction(XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along the c axis perpendicular to the *** resistivity increases with the increase of the RF *** lowest resistivity achieved is 9.2×10℃Ωcm at a RF power of 15 W with a Hall mobility of 30 cm V s and a carrier concentration of 2.3 ×10 *** average transmittance drops from 85%to 81%in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RFpower.