A Simple Solution of the WSix Peeling Issue at MDDR Technology
作者单位：School of Semiconductor EngineeringSamSung Institute of Technology(SSIT)Gyeonggi-DoKOREA FAB3 TeamMemory Division Semiconductor Business Samsung Electronics Co.San 16 Banwol-DongHwasung-CityGyeonggi-DoKOREA445-701 Product Quality Assurance TeamMemory Division Semiconductor Business Samsung Electronics Co.San 16 Banwol-DongHwasung-CityGyeonggi-DoKOREA445-701
会议名称：《2008 9th International Conference on Solid-State and Integrated-Circuit Technology》
会议日期：2008年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
关 键 词：SRCAT(Sphere-shaped-Recess-Channel-Array Transistor) WSix Peeling,Groove Gate Poly CMP(Chemical Mechanical Polishing).
摘 要：In this paper,the advanced process has been presented to remove the WSi peeling which was brought in sub- l00nm DRAM SRCAT (Sphere-shaped-Recess-Channel-Array Transistor).The source of WSi peeling was proved to be the groove of gate poly *** have completely solved the problems to adopt the gate-poly CMP(Chemical Mechanical Polishing) process.