Room-temperature electric control of exchange bias effect in CoO1-δ/Co films using Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) substrates

作     者：Xin Wen Rui Wu Wen-Yun Yang Chang-Sheng Wang Shun-Quan Liu Jing-Zhi Han Jin-Bo Yang 闻馨;吴锐;杨文云;王常生;刘顺荃;韩景智;杨金波

作者机构：State Key Laboratory for Mesoscopic Physics and School of PhysicsPeking UniversityBeijing 100871China Beijing Key Laboratory for Magnetoelectric Materials and DevicesBeijing 100871China Collaborative Innovation Center of Quantum MatterBeijing 100871China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第9期

页      面：564-568页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Project supported by the National Key R&D Program of China(Grant Nos.2017YFA0206303 and 2017YFA020630) the National Natural Science Foundation of China(Grant Nos.11975035 and 51731001) 

主　　题：electric control exchange bias PMN-PT magnetic anisotropy 

摘      要：Significant electric control of exchange bias effect in a simple CoO1-δ/Co system, grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both the coercivity field (HC) and the exchange bias field (HE), of 31% and 5%, respectively, have been observed when the electric field is applied to the substrate. While the change of coercivity is related to the enhanced uniaxial anisotropy in the ferromagnetic layer, the change of the exchange bias field can only originate from the spin reorientation in the antiferromagnetic CoO1-δ layer caused by the strain-induced magnetoelastic effect. A large HE/HC 2, and HE~ 110 Oe at room temperature, as well as the low-energy fabrication of this system, make it a practical system for spintronic device applications.