Sn-based type-VIII single-crystal clathrates with a large figure of merit

作     者：Deng Shu-Kang Li De-Cong Shen Lan-Xian Hao Rui-Ting T.Takabatake 邓书康;李德聪;申兰先;郝瑞亭;T.Takabatake

作者机构：Key Laboratory of Advanced Technique&Preparation for Renewable Energy Materials of Ministry of Education Solar Energy Research InstituteYunnan Normal UniversityKunming 650092China Department of Quantum MatterADSM and IAMR Hiroshima UniversityHigashi-Hiroshima 739-8530Japan 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第1期

页      面：462-466页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.50902119) 

主　　题：thermoelectric material type-VIII clathrate thermoelectric properties 

摘      要：Single-crystal samples of type-VIII BasGa16-xCuxSn30 （x = 0, 0.03, 0.06, 0.15） clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n, is 3.5-5 × 10^19 cm^-3 for all the samples, the carrier mobility, μH, increases to more than twice that of BasGa16Sn30 for all the Cu doping samples, and consequently the electrical conductivity is enhanced distinctly from 1.90×10^4 S/m to 4.40 ×10^4 S/m, with the Cu composition increasing from x = 0 to x = 0.15. The Seebeck coefficient,α, decreases slightly with the increases in Cu composition. The values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x = 0 and x = 0.03. The lattice thermal conductivity, μL, decreases from 0.59 W/InK for x = 0 to 0.50 W/mK for x = 0.03 at 300 K. The figure of merit for x = 0.03 reaches 1.35 at 540 K.