Eu luminescence from BaTiO_(3)/SiO_(2)multilayer xerogel structures

作     者：N.Gaponenko D.Parafinyuk P.Kholov T.Raichenok S.Prislopski 

作者机构：Belarusian State University of Informatics and Radioelectronics P.Browki Street 6220013 MinskBelarus National Research Nuclear University MEPhI(Moscow Engineering Physics Institute)31 Kashirskoe Shosse115409 MoscowRussia B.I.Stepanov Institute of Physics National Academy of Sciences of Belarus 220072Nezavisimosti Avenue 68MinskBelarus 

出 版 物：《Journal of Advanced Dielectrics》 (先进电介质学报（英文）)

年 卷 期：2020年第10卷第3期

页      面：60-63页

学科分类：0808[工学-电气工程] 081704[工学-应用化学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0817[工学-化学工程与技术] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 070301[理学-无机化学] 0702[理学-物理学] 

基　　金：This work was partially supported by the State Committee on Science and Technology of the Republic of Belarus Project No.T19MLDG-005 

主　　题：Photonic crystal Bragg reflector sol-gel europium luminescence 

摘      要：Sol-gel technology was applied to fabricate Eu-doped BaTiO_(3)/SiO_(2)multilayer structures by spinning on silicon and fused silica *** photoluminescence(PL)was investigated depending on the annealing temperature of these *** samples demonstrate the room temperature luminescence corresponding to^(5)D^(0)→^(7)F_(J)(J=1,2,3,4)transitions of trivalent europium with the most intensive band at 615 *** the structure on fused silica with Eu in the BaTiO_(3)cavity,increase of the annealing temperature from 450℃to 700℃results in modification of the luminescence indicatrix and lowering of the luminescence intensity in the direction along the surface *** BaTiO_(3)/SiO_(2)multilayer structure generated on silicon,scanning electron microscopy(SEM)analyses reveal disordering after annealing at 1000℃.This heat treatment provides also an increase of the Eu luminescence intensity.