Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

作     者：Sh.G.Askerov L.K.Abdullayeva M.G.Hasanov Sh.G.Askerov;L.K.Abdullayevat;M.G.Hasanov

作者机构：Institute for Physical ProblemsBaku State UniversityAZ1148BakuAzerbaijan 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2020年第41卷第10期

页      面：17-20页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Schottky diode metal–semiconductor contact current–voltage characteristics interfaces heterogeneity complex systems 

摘      要：The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex *** effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous *** has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.