Optimizing resistance of round hollow wire at high frequency

作     者：FENG Yong jian 1,ZHANG Tao 2 (1. Micro Electronic Mechanical Center, Xiamen University, Xiamen 361005,China 2. Department of Electrical Engineering Computer Science, Case Western Reserve University,Cleveland,OH 44106,USA) 

出 版 物：《微纳电子技术》 (Micronanoelectronic Technology)

年 卷 期：2003年第Z1期

页      面：415-418页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：resistance hollow wire Bessel function skin depth 

摘      要：The results and methods of calculation of resistance of hollow wire in gigahertz range by Bessel function are given. According to the results of computation, it is found that the resistor of conductor can be optimized using hollow wire with specific wall thickness. At high frequency the current distribution across a circular hollow wire is at surface of wire, which is called skin depth. We found that optimum wall thickness is proportional to skin depth and the phase abrupt change point of H field. Theoretical analysis and mechanism optimized round hollow wire will be presented in this paper. The calculation indicates that cylindrical hollow wire can be optimized to decrease resistance above 8%.