A Novel Process for SiGe Core-Shell JAM Transistors Fabrication and Thermal Annealing Effect on Its Electrical Performance

作     者：Ashish Kumar Wen-Hsi Lee 

作者机构：Department of Electrical EngineeringNational Cheng Kung UniversityTaiwan 

出 版 物：《Semiconductor Science and Information Devices》 (半导体科学与信息器件（英文）)

年 卷 期：2019年第1卷第2期

页      面：11-18页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Junctionless-accumulation(JAM)FET Junctionless(JL)FET SiGe core-shell Rapid thermal anneal Subthreshold swing(SS) 

摘      要：In this study,we fabricate Si/SiGe core-shell Junctionless accumulation mode(JAM)FinFET devices through a rapid and novel process with four main steps,i.e.e-beam lithography definition,sputter deposition,alloy combination annealing,and chemical solution *** height of Si core is 30 nm and the thickness of Si/SiGe core-shell is about 2 *** finishing the fabrication of devices,we widely studied the electrical characteristics of poly Si/SiGe core-shell JAM FinFET transistors from a view of different Lg and Wch.A poly-Si/SiGe core-shell JAMFETs was successfully demonstrated and it also exhibits a superior subthreshold swing of 81mV/dec and high on/off ratio10^5 when annealing for 1hr at 600℃.The thermal diffusion process condition for this study are 1hr at 600℃ and 6hr at 700℃ for *** annealing condition at 700oC for 6 hours shows undesired electrical characteristics against the *** suggests that from over thermal budget causes a plenty of Ge to precipitate against to form SiGe thin *** JAMFETs at low temperature shows outstanding Subthreshold swing and better swing condition when compared to its counterpart *** higher *** new process can still fabricate a comparable performance to classical planar FinFET in driving current.