Simultaneous N-intercalation and N-doping of epitaxial graphene on 6H-SiC（0001） through thermal reactions with ammonia
Simultaneous N-intercalation and N-doping of epitaxial graphene on 6H-SiC（0001） through thermal reactions with ammonia作者机构：State Key Laboratory of Catalysis Dalian Institute of Chemical Physics the Chinese Academy of Sciences Dalian 116023 China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2013年第6卷第6期
页 面：399-408页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 081705[工学-工业催化] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：国家自然科学基金 国家科技部项目 中国博士后科学基金
主 题：graphene SiC intercalation doping STM
摘 要：Surface functionalization of epitaxial graphene overlayers on 6H-SiC（0001） has been attempted through thermal reactions in NH3. X-ray photoelectron spectroscopy and micro-region low energy electron diffraction results show that a significant amount of N is present at the NHB-treated graphene surface, which results in strong band bending at the SiC surface as well as decoupling of the graphene overlayers from the substrate. The majority of the surface N species can be removed by annealing in vacuum up to 850 ~C, weakening the surface band bending and resuming the strong coupling of graphene with the SiC surface. The desorbed N atoms can be attributed to the intercalated species between graphene and SiC. Low temperature scanning tunneling spectroscopy and density functional theory simulations confirm the presence of N dopants in the graphene lattice, which are in the form of graphitic substitution and can be stable above 850 ~C. This is the first report of simultaneous N intercalation and N doping of epitaxial graphene overlayers on SiC, and it may be employed to alter the surface physical and chemical properties of epitaxial graphene overlayers.
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