N1s Electron Binding Energies of CN_x Thin Films Grown by Magnetron Sputtering at Different Temperature

作     者：Zheng, WT Xing, KZ Hellgren, N Ivanov, I Salaneck, WS Sundgren, JE 

作者机构：Linkoping Univ Dept Phys S-58183 Linkoping Sweden 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：1998年第14卷第1期

页      面：25-28页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

主　　题：Thin films 

摘      要：Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature T-s, in which the peak at 400.0 eV increases with T-s, whereas the peak at 398.3 eV decreases with T-s slightly. On the basis of XPS, FTIR and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp(2) coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp(3) coordinated C atoms as well as N-C bonds.