Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film

作     者：胡令 孙玉平 王波 罗轩 盛志高 朱雪斌 宋文海 杨昭荣 戴建明 

作者机构：Key Laboratory of Materials Physics Institute of Solid State Physics Chinese Academy of Sciences Hefei 230031 High Magnetic Field Laboratory Chinese Academy of Sciences Hefei 230031 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2010年第27卷第9期

页      面：207-210页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 

基　　金：Supported by the National Basic Research Program of China under Grant No 2007CB925002  and the National Natural Science Foundation of China under Grant Nos 10774146  10904147 and 10974205 

主　　题：METAL-insulator transitions TRANSITION temperature THIN films MAGNETIC fields MAGNETIZATION TRANSPORT theory (Mathematics) 

摘      要：Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.