A new single-element layered two-dimensional semiconductor:black arsenic
A new single-element layered two-dimensional semiconductor:black arsenic作者机构:Hunan Key Laboratory of Super-Microstructure and Ultrafast ProcessSchool of Physics and ElectronicsCentral South UniversityChangsha 410083China
出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))
年 卷 期:2020年第41卷第8期
页 面:6-7页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术(可授工学、理学学位)] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
主 题:materials. layered dimensional
摘 要:The discovery of graphene,the first two-dimensional material with a thickness of an atomic layer,opened the prelude to the development of other atom-thin two-dimensional layered *** are considered to be one of the best candidates to extend Moore’s ***,graphene is a zero-bandgap semimetal,which limits its application in logic circuits[1].