Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

作     者：SONGZhong-xiao WANGYuan XUKe-wei LIUChun-liang SONG Zhong-xiao l, WANG Yuan2, XU Ke-wei2, LIU Chun-liang’ Key Lab for Physical Electronics and Devices Ministry of Education, Xi’an Jiaotong University, 710049 Xi’an, China 2. State-Key Laboratory for Mechanical Behavior of Materials, Xi ’an Jiaotong University, 710049 Xi ’an, China

作者机构：KeyLabforPhysicalElectronicsandDevicesMinistryofEducationXi＇anJiaotongUniversity710049Xi＇anChina State-KeyLaboratoryforMechanicalBehaviorofMaterialsXi＇anJiaotongUniversity710049Xi＇anChina 

出 版 物：《材料热处理学报》 (Transactions of Materials and Heat Treatment)

年 卷 期：2004年第25卷第5B期

页      面：1225-1228页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0802[工学-机械工程] 0704[理学-天文学] 0702[理学-物理学] 080201[工学-机械制造及其自动化] 

基　　金：the Natural Science Foundation of China for its financial support under the granted No.59931010 

主　　题：扩散势垒 Zr-Si-N 退火 化学稳定性 

摘      要：Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gas mixture at 800°C, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800°C. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800°C when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.