Predicting the Potential Performance in P-Type SnS Crystals via Utilizing the Weighted Mobility and Quality Factor

作     者：Wenke He Bingchao Qin Li-Dong Zhao 何文科;秦炳超;赵立东

作者机构：Affiliations School of Materials Science and EngineeringBeihang UniversityBeijing 100191China 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2020年第37卷第8期

页      面：88-93页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Supported by the National Key Research and Development Program of China(Grant Nos.2018YFA0702100 and 2018YFB0703600) the National Natural Science Foundation of China(Grant Nos.51632005 and 51772012) the Beijing Natural Science Foundation(Grant No.JQ18004) the Shenzhen Peacock Plan Team(Grant No.KQTD2016022619565991) 111 Project(Grant No.B17002) the National Science Fund for Distinguished Young Scholars(Grant No.51925101) 

主　　题：scattering doping utilize 

摘      要：The figure of merit ZT is the direct embodiment of thermoelectric performance for a given ***,as an indicator of performance improvement,the only ZT value is not good enough to identify its outstanding inherent properties,which are highly sought in thermoelectric ***,we utilize one powerful parameter to reveal the outstanding properties of a given *** weighted mobility is used to estimate the carrier transports of p-type SnS crystals,including the differences in doping level,carrier scattering and electronic band *** analyze the difference in carrier scattering mechanism for different crystal forms with the same doping level,then evaluate and confirm the temperature-dependent evolution of electronic band structures in ***,we calculate the quality factor B based on the weighted mobility,and establish the relationship between ZT and B to further predict the potential performance in p-type SnS crystals with low cost and earth abundance,which can be realized through taking advantage of the inherent material property,thus improving B factor to achieve optimal thermoelectric level.