The 2-axis stress component decoupling of {100} c-Si by using oblique backscattering micro-Raman spectroscopy

作     者：DongHui Fu XiaoYong He LuLu Ma HuaDan Xing Tian Meng Ying Chang Wei Qiu DongHui Fu;XiaoYong He;LuLu Ma;HuaDan Xing;Tian Meng;Ying Chang;Wei Qiu

作者机构：Tianjin Key Laboratory of Modern Engineering MechanicsDepartment of MechanicsTianjin UniversityTianjin 300350China Department of Mechanical EngineeringLamar UniversityBeaumont TX 77710USA Department of Electrical and Computer EngineeringUniversity of DelawareNewark DE 19711USA 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学:物理学、力学、天文学(英文版))

年 卷 期：2020年第63卷第9期

页      面：51-57页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081704[工学-应用化学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 070302[理学-分析化学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0704[理学-天文学] 

基　　金：the National Key Research and Development Program of China(Grant No.2018YFB0703500) the National Natural Science Foundation of China(Grant Nos.11827802,11772223,11772227,11890680,and 61727810) 

主　　题：{100}c-Si stress component decoupling oblique backscattering micro-Raman spectroscopy 

摘      要：With the application of strain engineering in microelectronics,complex stress states are introduced into advanced semiconductor ***,there is still a lack of effective metrology for the decoupling analysis of the complex stress states in semiconductor *** paper presents an investigation on the 2-axis stress component decoupling of{100}monocrystalline silicon(c-Si)by using oblique backscattering micro-Raman spectroscopy.A spectral-mechanical model was established,and two practicable methods for actual stress decoupling analyses were *** verification experiments demonstrated the correctness and applicability of the methods proposed in this paper.