Application of graphene vertical field effect to regulation of organic light-emitting transistors

作     者：Hang Song Hao Wu Hai-Yang Lu Zhi-Hao Yang Long Ba 宋航;吴昊;陆海阳;杨志浩;巴龙

作者机构：State Key Laboratory of BioelectronicsSoutheast UniversityNanjing 210096China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第5期

页      面：473-478页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.31872901) the National Key Research and Development Program of China(Grant No.2016YFA0501602) 

主　　题：graphene vertical field effect transistor organic light-emitting transistor ion-gel film gate voltage regulation 

摘      要：The luminescence intensity regulation of organic light-emitting transistor(OLED)device can be achieved effectively by the combination of graphene vertical field effect transistor(GVFET)and *** this paper,we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film,confirming that its current switching ratio reaches up to *** of the property of high light transmittance in ion-gel film,the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical *** also prepare the graphene vertical organic light-emitting field effect transistor(GVOLEFET)by the combination of GVFET and graphene OLED,analyzing its electrical and optical properties,and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.