Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

作     者：宁帅 战鹏 王炜鹏 李正操 张政军 

作者机构：State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第12期

页      面：458-463页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.51372135) the Research Project of the Chinese Ministry of Education(Grant No.113007A) the Tsinghua University Initiative Scientific Research Program 

主　　题：magnetic semiconductors magnetic annealing defects zinc oxides 

摘      要：Highly c-axis oriented un-doped zinc oxide（Zn O） thin films, each with a thickness of ～ 100 nm, are deposited on Si（001） substrates by pulsed electron beam deposition at a temperature of ～ 320℃, followed by annealing at 650℃ in argon in a strong magnetic field. X-ray photoelectron spectroscopy（XPS）, positron annihilation analysis（PAS）, and electron paramagnetic resonance（EPR） characterizations suggest that the major defects generated in these Zn O films are oxygen vacancies. Photoluminescence（PL） and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped Zn O film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the Zn O films are also discussed.