Novel Operation Mechanism of Capacitorless DRAM Cell Using Impact Ionization and GIDL Effects
Novel Operation Mechanism of Capacitorless DRAM Cell Using Impact Ionization and GIDL Effects作者机构：Department of Microelectronics Xi 'an Jiaotong University West Xianning Rd 28 Shaanxi China
出 版 物：《Computer Technology and Application》 (计算机技术与应用（英文版）)
年 卷 期：2013年第4卷第7期
页 面：351-355页
学科分类：07[理学] 08[工学] 070203[理学-原子与分子物理] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 0702[理学-物理学]
主 题：DRAM cell ionization GIDL effects.
摘 要：A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was proposed. The conventional capacitorless DRAM cell with single charge generating effect is either high speed or low power, while the proposed DG-FinFET （double-gate fin field effect transistor） cell employs the efficient integration of impact ionization and GIDL effects by coupling the front and back gates with optimal body doping profile and proper bias conditions, yielding high speed low power performance. The simulation results demonstrate ideal characteristics in both cell operations and power consumption. Low power consumption is achieved by using GIDL current at 0. luA when the coupling between the front and back gates restrains the impact ionization current in the first phase. The write operation of the cell is within Ins attributed to significant current of the impact ionization effect in the second phase. By shortening second phase, power consumption could be further decreased. The ratio of read ＂1＂ and read ＂0＂ current is more than 9.38E5. Moreover, the cell has great retention characteristics.
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