Growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates by molecular beam epitaxy

作     者：Yi-Fan Shen Xi-Bo Yin Chao-Fan Xu Jing He Jun-Ye Li Han-Dong Li Xiao-Hong Zhu Xiao-Bin Niu 沈逸凡;尹锡波;徐超凡;贺靖;李俊烨;李含冬;朱小红;牛晓滨

作者机构：College of Materials Science and EngineeringSichuan UniversityChengdu 610064China School of Materials and EnergyUniversity of Electronic Science and Technology of ChinaChengdu 610054China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第5期

页      面：429-434页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFA0306102 and 2018YFA0306703) the National Natural Science Foundation of China(Grant Nos.61474014 and U1601208) the Sichuan Science and Technology Program,China(Grant Nos.2019YJ0202 and 20GJHZ0229) 

主　　题：In2Se3 molecular beam epitaxy single-crystalline annealing and quench phase transition 

摘      要：Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates are *** In2Se3 thin films grown below theβ-to-αphase transition temperature(453 K)are characterized to be strainedβ-In2Se3 mixed with significantγ-In2Se3 *** pure-phased single-crystallineβ-In2Se3 can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In2Se3 within the phase equilibrium temperature window ofβ-*** is suggeted that the observedγ-to-βphase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In2Se3 thin-film system at a state far from thermodynamic equilibrium.