EXAFS and SR-XRD study on Cu occupation sites in Zn_(1-x)Cu_xO diluted magnetic semiconductors

作     者：YANG Chen ZHANG Bin WANG Jianzhong SHI Liqun CHENG Huansheng YANG Tieying WEN Wen HU Fengchun 

作者机构：Applied lon Beam Physics Laboratory(Key Laboratory of the Ministry of Education)Institute of Modern PhysicsFudan UniversityShanghai200433China Department of Nuclear Science and TechnologyFudan UniversityShanghai200433China Shanghai Institute of Applied PhysicsChinese Academy of SciencesShanghai201204China National Synchrotron Radiation LaboratoryUniversity of Science and Technology of ChinaHefei230029China 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2012年第23卷第2期

页      面：65-69页

核心收录：

学科分类：081705[工学-工业催化] 08[工学] 0817[工学-化学工程与技术] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 10775033 and 11075038) support from Shanghai Leading Academic Discipline Project (Project Number: B107) 

主　　题：同步辐射X射线衍射 EXAFS 铜薄膜 稀磁半导体 扩展X射线吸收精细结构 地盘 ZnO薄膜 射频磁控溅射 

摘      要：ZnO films, doped with 2.9 atom% Cu, were prepared by radio frequency magnetron sputtering on sapphire substrate at different substrate temperatures. No magnetic impurities such as Fe, Co and Ni were found in the PIXE spectra. The ZnO:Cu films possessed the wurtzite ZnO structure. No precipitates such as CuO and Cu2O or Cu cluster, were observed by synchrotron radiation X-ray diffraction in the ZnO:Cu films. Extended X-ray absorption fine structure (EXAFS) analysis showed that Cu atoms were incorporated into ZnO crystal lattice by occupying the sites of Zn atoms.